期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 5, 页码 2142-2147出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2686840
关键词
Bias temperature instability (BTI); gallium nitride MOSFETs; oxide trapping; semiconductor device reliability
资金
- National Defense Science and Engineering Graduate Fellowship
- MIT-MTL GaN Energy Initiative
We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs under moderate positive and negative gate bias stress. We investigate the evolution of threshold voltage (V-T), maximum transconductance (g(m, max)), and subthreshold swing (S). Our results show a universal continuous, symmetrical, and reversible V-T shift and gm, max change as gate stress voltage (V-GS,V- stress) increasesfrom-5 to 5V at roomtemperature. The time evolution of VT is well described by a power law model. The voltage dependence, time dependence, and temperature dependence of our results suggest that for moderate gate bias stress, positive BTI and negative BTI are due to a single reversible mechanism. This is electron trapping/detrapping in preexisting oxide traps that form a defectband very close to theGaN/oxide interface and extend in energy beyond the conduction band edge of GaN and below the Fermi level at the channel surface at 0 V.
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