期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 67, 期 4, 页码 682-686出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.67.682
关键词
GaN; HEMT; Field plate; T-shaped gate; Breakdown voltage
资金
- ETRI
- Institute for Information & communications Technology Promotion(IITP) - Korea government. (MSIP) [B0132-15-1006]
An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the I-shaped gate with the head of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the foot of the gate which showed a possibility for a gate length reduction.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据