High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

Heterojunction-Free GaN Nanochannel FinFETs With High Performance

(2013) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

(2012) Shenghou Liu et al.   IEEE ELECTRON DEVICE LETTERS

Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

(2012) Jiangjiang J. Gu et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Gate Normally-Off GaN Power MISFET

(2012) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

(2012) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

(2011) Mohamed Azize et al.   IEEE ELECTRON DEVICE LETTERS

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

(2011) Ki-Won Kim et al.   IEEE ELECTRON DEVICE LETTERS

Normally Off AlGaN/GaN Metal–2DEG Tunnel-Junction Field-Effect Transistors

(2011) Li Yuan et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

(2011) C. Y. Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

(2010) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

Nanowire transistors without junctions

(2010) Jean-Pierre Colinge et al.   Nature Nanotechnology

Junctionless multigate field-effect transistor

(2009) Chi-Woo Lee et al.   APPLIED PHYSICS LETTERS

Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

(2009) Kota Ohi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS