期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 1, 页码 33-35出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2291854
关键词
GaN; inverter; DCFL; small variations
资金
- National Natural Science Foundation of China [60406004, 60890193, 60736033, 4112025]
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication
High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 degrees C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 degrees C, the fabricated inverter operates properly at a supply voltage (V-DD) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V-TH), 2.4 V for logic-low noise margin (NML), and 3.4 V for logic-high noise margin (NMH). Meanwhile, the inverter exhibits small variations from RT to 300 degrees C in terms of logic voltage swing, V-TH, NML, and NMH with the maximum relative variations of 2.2%, 5.7%, 12.9%, and 4.9% in such temperature range, respectively.
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