期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 61, 期 12, 页码 4070-4077出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2364855
关键词
Deep level transient spectroscopy (DLTS); defects; gallium nitride; high electron mobility transistor (HEMT); trap levels
资金
- European Defence Agency through the MANGA Project within the Italian Ministry of Defense
- ONR project [N000141410647]
This paper presents an extensive investigation of the properties of the trap with activation energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse (CC) in AlGaN/GaN HEMTs. The study was carried out on AlGaN/GaN HEMTs with increasing concentration of iron doping in the buffer. Based on pulsed characterization and drain current transient measurements, we demonstrate that for the samples under investigation: 1) increasing concentrations of Fe-doping in the buffer may induce a strong CC, which is related to the existence of a trap level located 0.63 eV below the conduction band energy and 2) this trap is physically located in the buffer layer, and is not related to the iron atoms but-more likely-to an intrinsic defect whose concentration depends on buffer doping. Moreover, we demonstrate that this level can be filled both under OFF-state conditions (by gate-leakage current) and under ON-state operation (when hot electrons can be injected to the buffer): for these reasons, it can significantly affect the switching properties of AlGaN/GaN HEMTs.
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