Comparing electrical performance of GaN trench-gate MOSFETs witha-plane $(11\bar{2}0)$ andm-plane $(1\bar{1}00)$ sidewall channels

标题
Comparing electrical performance of GaN trench-gate MOSFETs witha-plane $(11\bar{2}0)$ andm-plane $(1\bar{1}00)$ sidewall channels
作者
关键词
-
出版物
Applied Physics Express
Volume 9, Issue 12, Pages 121001
出版商
Japan Society of Applied Physics
发表日期
2016-11-02
DOI
10.7567/apex.9.121001

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