期刊
MICROELECTRONICS RELIABILITY
卷 100, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2019.113434
关键词
Aging; AlGaN/GaN HEMT; Pulsed-RF operating life test; Reliability; Traps
资金
- French Ministry of Defence
- Normandy region, France (RIN-PlaceNano) - French Defence Procurement Agency (DGA) [2015 91 0907]
Reliability studies are fundamental to optimize the use of new emerging technologies such as AIGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using A1GaN/GaN HEMT in real operating conditions for radar applications. Three pulsed-RF long aging tests (8000 h/11,000 h total) are performed under different conditions of (V-ds), Temperature, gain compression and Duty cycle. A following of various degradation indicators during the aging tests is presented (P-out, I-ds, I-gs, R-ds(on), G(m) and V-th). This study will contribute to establish a new reliability prediction model of GaN devices and update the FIDES guide.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据