Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Field plate related reliability improvements in GaN-on-Si HEMTs

(2012) A. Chini et al.   MICROELECTRONICS RELIABILITY

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

(2010) Milan Ťapajna et al.   IEEE ELECTRON DEVICE LETTERS

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

(2010) Athikom Manoi et al.   IEEE ELECTRON DEVICE LETTERS

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

(2010) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability issues of Gallium Nitride High Electron Mobility Transistors

(2010) Gaudenzio Meneghesso et al.   International Journal of Microwave and Wireless Technologies

Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation

(2009) A. Chini et al.   IEEE ELECTRON DEVICE LETTERS

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

(2009) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Three-dimensional finite-element thermal simulation of GaN-based HEMTs

(2009) F. Bertoluzza et al.   MICROELECTRONICS RELIABILITY

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

(2008) M. Faqir et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE