A method for evaluation of aluminium composition in pseudomorphic AlxGa1-xN layer from the measured photoluminescence (PL) peak energy is presented here. The layers were grown by metalorganic chemical vapor deposition and characterized by high resolution X-ray diffraction (HRXRD), PL, cathodoluminescence, and atomic force microscopy. We estimated the value of biaxial stress in pseudomorphic AlxGa1-xN layers grown on sapphire and silicon carbide substrates using HRXRD scans. The effect of biaxial stress on the room temperature band edge luminescence in pseudomorphic AlxGa1-xN/GaN layers for various aluminium compositions in the range of 0.2 < x < 0.3 was determined. The value of pressure coefficient of band gap was also estimated. The stress corrected bowing parameter in AlxGa1-xN was determined as 0.5060.06 eV. Our values match well with the theoretically obtained value of bowing parameter from the density functional theory. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据