Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

(2014) Isik C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

(2013) Srabanti Chowdhury et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

(2013) Srabanti Chowdhury et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

(2012) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Planar Nearly Ideal Edge-Termination Technique for GaN Devices

(2011) A. Merve Ozbek et al.   IEEE ELECTRON DEVICE LETTERS

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

(2011) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

(2011) Srabanti Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

(2010) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

SiC Power Devices for Microgrids

(2010) Qingchun Zhang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH