期刊
MATERIALS
卷 11, 期 10, 页码 -出版社
MDPI
DOI: 10.3390/ma11101968
关键词
HEMTs; strain; AlxGa1-xN; crack-free; silicon
类别
资金
- Engineering and Physical Sciences Research Council of United Kingdoms [EP/P006973/1]
- EPSRC [EP/M003132/1, EP/P006973/1] Funding Source: UKRI
We have designed and then grown a simple structure for high electron mobility transistors (HEMTs) on silicon, where as usual two transitional layers of AlxGa1-xN (x = 0.35, x = 0.17) have been used in order to engineer the induced strain as a result of the large lattice mismatch and large thermal expansion coefficient difference between GaN and silicon. Detailed x-ray reciprocal space mapping (RSM) measurements have been taken in order to study the strain, along with cross-section scanning electron microscope (SEM) images and x-ray diffraction (XRD) curve measurements. It has been found that it is critical to achieve a crack-free GaN HEMT epi-wafer with high crystal quality by obtaining a high quality AlN buffer, and then tuning the proper thickness and aluminium composition of the two transitional AlxGa1-xN layers. Finally, HEMTs with high performance that are fabricated on the epi-wafer have been demonstrated to confirm the success of our strain engineering and above analysis.
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