Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

In this study, we experimentally determined the impact ionization coefficients of GaN using homoepitaxially grown p-n diodes with avalanche capability. The extracted hole impact ionization coefficient is obtained as beta(E) = 4.39x10(6) exp (-1.8x10(7)/E) cm(-1), and the electron impact ionization coefficient is obtained as alpha(E) = 2.11x10(9) exp (-3.689x10(7)/E) cm(-1). This study also presents the temperature dependence of impact ionization coefficients in GaN. The results presented in this experimental study are an important contribution to the database on the material properties of GaN, which will enable more accurate prediction of the avalanche in GaN devices.