4.4 Article

Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201900687

关键词

GaN; low on-resistance; low trapping effects; silicon; superlattices

资金

  1. French RENATECH network
  2. European Union [720527]
  3. French National grant [ANR-16-CE05-0022-01]

向作者/读者索取更多资源

Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without generating additional trapping effects as compared with a more standard optimized step-graded AlGaN-based epistructure using a similar total buffer thickness. DC characterizations of fabricated transistors by means of back-gating measurements reflect both the enhancement of the breakdown voltage and the low trapping effects up to 1200 V. These results show that a proper buffer optimization and the insertion of SL pave the way to GaN-on-Si lateral power transistors operating at 1200 V with low on-resistance and low trapping effects.

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