期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 7, 页码 1040-1043出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2915578
关键词
Edge termination; fluorine ion implantation; GaN-on-GaN; high breakdown voltage; Schottky rectifier
资金
- National Key Research and Development Program of China [2017YFB0404100]
- National Natural Science Foundation of China [51807175]
In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become negative fixed charges in GaN, the electric field crowding at the junction edge can be mitigated and the breakdown voltage (BV) of the vertical GaN SBDs can be effectively enhanced. For SBDs, it is challenging to simultaneously achieve both high BV and low forward voltage drop (V-F). Thanks to the effective leakage suppression by FIT, a high BV of similar to 800 V is realized in an FIT-SBD even with a low V-F value of 0.85 V (at 100 A/cm(2)). By incorporating an AlGaN tunneling-enhancement layer, the FIT-SBD can achieve further improved BV of similar to 1020 V and V-F of 0.83 V. Fast reverse recovery performance has also been realized in the FIT-SBDs.
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