Article
Physics, Multidisciplinary
Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue
Summary: AlGaN/GaN heterojunction epitaxies have great potential for high-power and high-frequency devices. Low leakage current and low turn-on voltage are important for improving the rectification efficiency of AlGaN/GaN Schottky barrier diode. This study uses a novel wet-etching technique to improve the surface roughness of the anode groove and increases the breakdown voltage through thermal oxygen oxidation and KOH corrosion.
ACTA PHYSICA SINICA
(2023)
Article
Engineering, Electrical & Electronic
Tao Zhang, Yueguang Lv, Ruohan Li, Yanni Zhang, Yachao Zhang, Xiangdong Li, Jincheng Zhang, Yue Hao
Summary: This letter demonstrates a high-performance lateral AIGaN/GaN Schottky barrier diode featuring low turn-on voltage and high breakdown voltage, achieved by using a low work-function tungsten layer and a thick GaN cap layer. The device shows impressive stability in dynamic on-resistance and turn-on voltage under long-duration stress tests, indicating great potential for next-generation power electronic devices.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Ting-Ting Wang, Xiao Wang, Zhen-Hai Cui, Wen Hong, Yang Li, Liu-An Li, Yue He, Mao Jia, Chen Guo, Li-Hua Bai, Ying-Zhao Geng, Yue Hao, Jin-Ping Ao
Summary: This study investigates AlGaN/GaN heterostructure lateral Schottky barrier diodes (SBDs) with TiN and NiN dual anode on sapphire substrates. The results show that the turn-on voltage and leakage current of the DA SBDs can be adjusted by varying the radius of the TiN anode. Additionally, it is found that the NiN anode with its high work-function leads to low leakage current and high breakdown voltage, while the TiN anode with its low work-function determines the low turn-on voltage of the DA SBDs.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Physics, Multidisciplinary
Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue
Summary: This paper discusses the estimation problem of reverse characteristics of quasi-vertical GaN barrier Schottky diodes and proposes a design scheme with high breakdown voltage based on simulation and analysis. The scheme takes into account the leakage mechanisms and field plate structures in the composite device model.
ACTA PHYSICA SINICA
(2022)
Article
Physics, Applied
Haiyong Wang, Wei Mao, Cui Yang, Shenglei Zhao, Ming Du, Xiaofei Wang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Summary: The monolithic bidirectional switch based on p-GaN gate HEMT features four embedded Schottky barrier diodes, showing a high threshold voltage and low on-state voltage, suitable for AC power switching applications.
APPLIED PHYSICS EXPRESS
(2021)
Article
Physics, Multidisciplinary
Wu Peng, Zhang Tao, Zhang Jin-Cheng, Hao Yue
Summary: Utilizing the excellent properties of GaN, this study focuses on fabricating high-performance AlGaN/GaN Schottky barrier diodes on free-standing GaN substrates to overcome the challenges related to substrate mismatch. The fabricated devices demonstrate low leakage current and turn-on voltage, with potential for use in next-generation power electronics.
ACTA PHYSICA SINICA
(2022)
Article
Optics
Seung-Hye Baek, Dae-Choul Choi, Yoon Seok Kim, Hyunseok Na, Sung-Nam Lee
Summary: This paper investigates the impact of surface V-shaped defects on the electrical and optical characteristics of GaN-based LEDs, particularly under reverse bias conditions. The size of these defects plays a critical role, with larger defects generating more indium-rich regions and elevated tensile stress, leading to increased reverse leakage current and the formation of giant dot-like luminescence (GDL). However, localized failure predominantly occurs at the defect experiencing the highest tensile stress, significantly reducing the breakdown voltage. Micro-Raman analysis further reveals distinct Raman shifts and increased tensile stress in these regions. These findings highlight the complexity of V-shaped defects' effects and their importance in GaN-based LED design and optimization. Recognizing their influence on electrical and optical properties can significantly impact device reliability and performance, particularly in reverse bias conditions.
Article
Physics, Applied
Shixiong Liang, Guodong Gu, Hongyu Guo, Lisen Zhang, Xubo Song, Yuanjie Lv, Aimin Bu, Zhihong Feng
Summary: In this study, a new type of high-frequency and high-power terahertz Schottky barrier diode based on homoepitaxial gallium nitride (GaN) was fabricated. The homoepitaxial GaN demonstrated smaller x-ray diffraction peaks and increased electron mobility compared to heteroepitaxial GaN on sapphire substrate. These improvements resulted in lower resistances and higher cut-off frequency for the fabricated GaN SBD.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Nengtao Wu, Ling Luo, Zhiheng Xing, Shanjie Li, Fanyi Zeng, Ben Cao, Changtong Wu, Guoqiang Li
Summary: This article investigates a low-leakage-current and high-breakdown-voltage normally OFF p-GaN gate HEMT on a Si substrate with low-damage NH3 plasma pretreatment. The NH3 plasma pretreatment effectively removes surficial oxides and other impurities, suppresses interface traps, and reduces the overall drain leakage current. The NH3 plasma pretreated p-GaN gate HEMTs exhibit a high ON/OFF-current ratio, low reverse gate leakage current, high gate breakdown voltage, and high breakdown voltage at 1 mu A/mm.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Feng Zhou, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Tinggang Zhu, Hai Lu
Summary: Through selective Mg-ion implantation technology, GaN JBS diode achieved significantly enhanced avalanche ruggedness and surge current capability for highly reliable power operation, demonstrating excellent electrostatic performances, zero reverse recovery behaviors, crucial avalanche capability, and a large safe-operation-area under both forward and reverse inductive spikes even under extreme switching conditions.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Physics, Multidisciplinary
Qiliang Wang, Tingting Wang, Taofei Pu, Shaoheng Cheng, Xiaobo Li, Liuan Li, Jinping Ao
Summary: In this study, a quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to optimize the on-resistance and breakdown voltage. The use of a SiN dielectric and a field plate structure helps to suppress the electric field crowding effect and reduce the series resistance. The enhanced breakdown voltage is attributed to the charge-coupling effect between the insulation dielectric layer and GaN.
Article
Materials Science, Multidisciplinary
Zhen-Wei Qin, Wei-Chia Chen, Hao-Hsuan Lo, Yue-Ming Hsin
Summary: This study systematically investigates the gate degradation mechanisms of Schottky p-GaN gate HEMTs. The gate breakdown is studied by applying constant gate bias stress. It is found that the gate lifetime of Schottky p-GaN Gate HEMTs decreases as the gate bias increases. The gate leakage current after gate breakdown exhibits a resistance-like characteristic. An equivalent circuit is proposed to discuss the gate breakdown mechanisms, which primarily occur between the gate and source and result in a resistance-like I-V characteristic.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Physics, Applied
Xingjie Huang, Yanhui Xing, Guohao Yu, Wenxin Tang, Xing Wei, Liang Song, Xiaodong Zhang, Yaming Fan, Zhongming Zeng, Yong Cai, Baoshun Zhang, Zengli Huang, Rong Huang, Jun Han
Summary: A thin SiN(x) film deposited on the p-GaN layer before H plasma implantation reduces gate reverse leakage current by four orders of magnitude and increases the OFF-state breakdown voltage by 89%. It also improves the dynamic performance of the device by blocking excessive H plasma and reducing damage in the AlGaN barrier layer.
APPLIED PHYSICS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Tao Zhang, Yanni Zhang, Jincheng Zhang, Xiangdong Li, Yueguang Lv, Yue Hao
Summary: This work presents a high-performance lateral GaN metal-insulator-semiconductor (MIS) diode with a low turn-on voltage of 0.32 V, supported by in-depth theoretical calculations on current transport mechanisms and a forward conduction model. The coexistence of direct tunneling (DT) and thermionic emission (TE) contributes to the low subthreshold swing (SS), while a 1.8 nm thick Al2O3 interlayer effectively suppresses reverse leakage.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Rikang Zhao, Xuanwu Kang, Yingkui Zheng, Hao Wu, Nan Wei, Shixiong Deng, Ke Wei, Xinyu Liu
Summary: A thin-barrier AlGaN/GaN Schottky barrier diode was proposed and implemented in a high-power RF limiter module, achieving better performance in terms of power capacity and frequency compared to traditional limiters.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)