期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 52, 期 2, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.7567/JJAP.52.028007
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In this letter, we describe the characteristics of Gallium Nitride (GaN) p-n junction diodes fabricated on free-standing GaN substrates with low specific on-resistance R-on and high breakdown voltage V-B. The breakdown voltage of the diodes with the field-plate (FP) structure was over 3 kV, and the leakage current was low, i.e., in the range of 10(-4) A/cm(2). The specific on-resistance of the diodes of 60 mu m diameter with the FP structure was 0.9 m Omega.cm(2). Baliga's figure of merit (V-B(2)/R-on) of 10 GW/cm(2) is obtained. Although a certain number of dislocations were included in the device, these excellent results indicated a definite availability of this material system for power-device applications. (C) 2013 The Japan Society of Applied Physics
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