Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 36, Issue 10, Pages 1011-1014

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-08-28

DOI

10.1109/led.2015.2474116

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