期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 6, 页码 941-944出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2912395
关键词
GaN; edge termination; avalanche breakdown
资金
- Council for Science, Technology and Innovation (SIP)
- Next-generation power electronics (funding agency: NEDO)
We report on homoepitaxial GaN p-n junction diodes with a negative beveled-mesa termination. The electric field distribution in a beveled-mesa was investigated using TCAD simulation, and the devices were designed using currently available GaN growth techniques. Shallow-angle (ca. 10 degrees) negative bevel GaN p-n junction diodes were fabricated with various Mg acceptor concentrations in the p-layers. The suppression of electric field crowding and improvement of the breakdown voltage were observed, as the Mg concentration was decreased. The parallel-plane breakdown field of 2.86 MV/cm was obtained for a device with the breakdown voltage of 425 V.
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