Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

(2015) Huarui Sun et al.   APPLIED PHYSICS LETTERS

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

(2015) Matteo Meneghini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-voltage normally OFF GaN power transistors on SiC and Si substrates

(2015) Oliver Hilt et al.   MRS BULLETIN

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

(2013) M. Jurkovic et al.   IEEE ELECTRON DEVICE LETTERS

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

(2012) Matteo Meneghini et al.   APPLIED PHYSICS LETTERS

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

(2012) M. Montes Bajo et al.   APPLIED PHYSICS LETTERS

Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

(2011) Daniel Morgan et al.   Applied Physics Express

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

(2010) C. Ostermaier et al.   APPLIED PHYSICS LETTERS

Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

(2009) M Ťapajna et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY