期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 8, 页码 3126-3131出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2716982
关键词
FETs; gallium nitride; gate leakage; power transistors; stability; threshold voltage
资金
- ARPA-E SWITCHES Program
Thispaper investigates the recoverable degradation of GaN-on-GaN vertical transistors under positive gate bias stress. Based on combined pulsedmeasurements and constant voltage stress test, we demonstrate the following original results: 1) when subjected to moderate gate stress (0 V < V-GS < 3 V), the devices show a negative threshold voltage shift, which is correlated with a decrease in on-resistance. This process is ascribed to the detrapping of electrons from the Al2O3 insulator, induced by a low positive bias and 2) for high stress bias (VGS = 5 V), a strong positive shift in threshold voltage is observed. This effect, which shows a slow recovery, is ascribed to the injection of electrons from the accumulation region (channel) toward the dielectric. Temperature-dependent measurements and 2-D simulations were carried out to support the hypothesis on degradation, and to evaluate the contribution of surface and bulk current in the n-GaN drift layer.
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