期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 78, 期 -, 页码 127-131出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.10.029
关键词
GaN; HEMTs; R-ON degradation; V-TH shift
类别
资金
- ENIAC Joint Undertaking Project Energy Efficient Converters using GaN Power Devices [324280]
The evaluation and investigation of electrical parameters drifts during device operation is one of the mandatory task that has to be performed in order to improve GaN-power devices stability. In this work the authors would like to present a novel characterization method that allows the simultaneous monitoring of both R-ON and V-TH during the switch-mode operation. By applying the proposed measurement method with different operating parameters it has been possible to provide a preliminary interpretation of the physical mechanisms leading to the observed R-ON increase and V-TH positive shift. In particular, the observed R-ON increase, which is thermally activated with a 0.83 eV activation energy, has been ascribed to the presence of Carbon-related traps within the device buffer layer. On the other hand, the positive V-TH shift has instead been related to interface defects at the dielectric/III-N interface and/or to bulk traps in the gate dielectric.
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