Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

Design and Simulation of Novel Enhancement Mode 5–20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications

(2013) Zhongda Li et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Avalanche Breakdown Design Parameters in GaN

(2013) Zhongda Li et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

(2011) Akira Nakajima et al.   IEEE ELECTRON DEVICE LETTERS

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

(2011) Srabanti Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

(2010) Masaya Okada et al.   Applied Physics Express

High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

(2010) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

(2010) Hiroshi Kambayashi et al.   SOLID-STATE ELECTRONICS

Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates

(2010) Yuki Niiyama et al.   SOLID-STATE ELECTRONICS

GaN Substrates for III-Nitride Devices

(2009) Tanya Paskova et al.   PROCEEDINGS OF THE IEEE

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

(2008) Hirotaka Otake et al.   Applied Physics Express

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

(2008) Masahito Kodama et al.   Applied Physics Express