880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 39, Issue 6, Pages 863-865

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2018-04-21

DOI

10.1109/led.2018.2828844

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