☆ 4.6 Article

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

APPLIED PHYSICS LETTERS (2013)

期刊

APPLIED PHYSICS LETTERS

卷 102, 期 7, 页码 -

出版社

AMER INST PHYSICS

DOI: 10.1063/1.4793196

关键词

-

类别

Physics, Applied

资金

UK Engineering and Physical Science Research Council (EPSRC) [EP/I033165/1]
EPSRC [EP/I033165/1] Funding Source: UKRI
Engineering and Physical Sciences Research Council [EP/I033165/1] Funding Source: researchfish

向作者/读者索取更多资源

Protocol

Reagent

摘要

Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10(-13) cm(2) were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793196]

作者

我是这篇论文的作者

点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6

评分不足

次要评分

新颖性

-

重要性

-

科学严谨性

-

评价这篇论文

推荐

Article Physics, Applied

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi

Summary: In this Letter, fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs) were demonstrated using molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range, a large ON/OFF ratio, and reconfigurable output characteristics. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance. These results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and have promising applications in next-generation electronics.

APPLIED PHYSICS LETTERS (2023)

添加到收藏夹

Article Physics, Applied

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Mei Ge, Yi Li, Youhua Zhu, Dunjun Chen, Zhiliang Wang, Shuxin Tan

Summary: The improved e-mode AlGaN/GaN HEMT with a gate stack beta-Ga2O3/p-GaN structure outperforms the conventional p-GaN gate HEMT, mainly due to the use of the beta-Ga2O3 layer which reduces the electric field strength in the gate region and decreases off-state leakage current. Additionally, there is a trade-off between the thickness of the beta-Ga2O3 layer and the performance of the device.

JOURNAL OF APPLIED PHYSICS (2021)

添加到收藏夹

Article Materials Science, Coatings & Films

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Stefan Schmult, Pascal Appelt, Claudia Silva, Steffen Wirth, Andre Wachowiak, Andreas Grosser, Thomas Mikolajick

Summary: Inconsistencies in the concentrations of unintentional donor impurities and free charge carriers in GaN/AlGaN layer stacks containing a two-dimensional electron gas (2DEG) can be explained by the measurement procedure and the method of extracting the free charge carrier concentration. When the 2DEG acts as the bottom electrode in capacitance versus voltage measurements, unphysically low concentrations of free charges are calculated due to the depletion of the 2DEG and the disappearance of the bottom electrode. It is shown that, for the case of a defined (non-vanishing) bottom electrode, the levels of donor impurities and resulting free charges consistently match.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Yixu Yao, Sen Huang, Qimeng Jiang, Xinhua Wang, Lan Bi, Wen Shi, Fuqiang Guo, Tiantian Luan, Jie Fan, Haibo Yin, Ke Wei, Yingkui Zheng, Jingyuan Shi, Yankui Li, Qian Sun, Xinyu Liu

Summary: A drain-controlled current-mode deep level transient spectroscopy (I-DLTS) was developed to investigate the Semi-ON-state current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). By inserting a graded AlGaN back-barrier, the charging of buffer traps induced by hot-electron effect was effectively blocked, resulting in a suppressed current collapse in AlGaN/GaN HEMTs under Semi-ON-state stress.

IEEE ELECTRON DEVICE LETTERS (2022)

添加到收藏夹

Article Physics, Multidisciplinary

Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor*

Si-De Song, Su-Zhen Wu, Guo-Zhu Liu, Wei Zhao, Yin-Quan Wang, Jian-Wei Wu, Qi He

Summary: In this study, the degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor were extensively analyzed under different stress conditions. The results showed that the device exhibited different electrical characteristics under various stress conditions, indicating excellent performance under reverse gate bias stress. These findings are significant in guiding process optimization towards a high voltage and highly reliable enhanced AlGaN/GaN high-electron mobility transistor.

CHINESE PHYSICS B (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor

Nipun Sharma, Sumit Kumar, Ankur Gupta, Surani Bin Dolmanan, Dharmraj Subhash Kotekar Patil, Swee Tiam Tan, Sudhiranjan Tripathy, Mahesh Kumar

Summary: By employing MoS2 functionalization on AlGaN/GaN HEMTs sensors, the researchers have successfully developed a sensitive and selective gas sensor for NO2 detection at room temperature. The sensor exhibited enhanced sensing response and complete recovery without any external stimuli, making it a promising candidate for nitride-based integrated electronics.

SENSORS AND ACTUATORS A-PHYSICAL (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

660-V/1.99-mΩ.cm2 Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain Layers

Jingyu Shen, Chao Yang, Liang Jing, Jingwei Guo, Ping Li, Hao Wu, Shengdong Hu

Summary: In this study, an enhancement mode p-GaN gate HEMT with selective regrowth and strain engineering has been proposed. The device shows improved 2DEG density and surface electric field distribution, leading to significant improvements in ON-resistance and breakdown voltage.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

添加到收藏夹

Article Materials Science, Multidisciplinary

p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors

Shaoqian Lu, Guohao Yu, Yingfei Sun, Xu Yuan, Zhongkai Du, Bingliang Zhang, Lu Wang, Yu Li, Dongdong Wu, Zengli Huang, Zhongming Zeng, Xulei Qin, Baoshun Zhang

Summary: In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p-GaN/AlGaN/GaN high-electron-mobility transistors, and the related mechanism is proposed. The nitrogen plasma treatment depletes holes in the p-GaN layer and changes the surface characteristics, resulting in the formation of a 2D electron gas at the AlGaN/GaN interface. The device shows enhanced performance with improved threshold voltage, on/off ratio, and maximum drain current.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2023)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

THz detection optimization of antenna coupled AlGaN/GaN high electron mobility transistors

M. Moscotin, J. Jorudas, M. Saniuk, P. Prystawko, S. L. Rumyantsev, W. Knap, G. Cywinski, I. Kasalynas

Summary: In this work, we investigated the use of THz antenna coupled AlGaN/GaN high electron mobility transistors (HEMTs) in EdgeFET and FinFET designs to develop a sensitive TeraFET detector. The experimental results demonstrated the dependence of sensitivity on channel length, and studied two types of radiation coupling via ohmic and capacitive connection of THz antennas.

2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate

S. Niranjan, R. Muralidharan, Prosenjit Sen, Digbijoy N. Nath

Summary: This article reports on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using an Au-free process on flexible Kapton tape. The flexible HEMT shows a slightly higher ON-current when bent, while the OFF-state performance remains unaffected. The electrical characteristics of the transferred devices indicate a reduction in 2-DEG concentration and ON-current compared to the original HEMTs.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

添加到收藏夹

Article Metallurgy & Metallurgical Engineering

AlGaN/GaN heterostructures for high power and high-speed applications

Bhubesh Chander Joshi

Summary: AlGaN/GaN heterostructures are promising for high-speed and high-power electronic devices. Due to the lack of native substrates, they are grown on foreign materials using two-step growth techniques. In this study, test structures, TLM pads, FET structure, ohmic contacts, and Schottky contacts were fabricated on AlGaN/GaN heterostructure. Transmission line measurement and current voltage measurement were used for characterization.

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH (2023)

添加到收藏夹

Article Physics, Applied

Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Mohammad Wahidur Rahman, Nidhin Kurian Kalarickal, Hyunsoo Lee, Towhidur Razzak, Siddharth Rajan

Summary: In this study, AlGaN/GaN HEMTs integrated with high permittivity BaTiO3 dielectric were discussed to enhance the breakdown characteristics. The use of high permittivity BaTiO3 dielectric layers prevented premature gate breakdown and enabled higher breakdown fields, leading to devices with high power figure of merit. This work demonstrates that electrostatic engineering with high-permittivity dielectrics can push AlGaN/GaN HEMTs closer to material breakdown field limits.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer

Stefan Moench, Stefan Mueller, Richard Reiner, Patrick Waltereit, Heiko Czap, Michael Basler, Jan Hueckelheim, Lutz Kirste, Ingmar Kallfass, Ruediger Quay, Oliver Ambacher

Summary: Experimental comparison between a high-voltage AlN/GaN superlattice (SL) buffer and a step-graded AlGaN/GaN buffer for monolithic AlGaN/GaN power circuits showed that the SL buffer performs better in mitigating negative back gating effects and leakage at positive substrate voltage, making it more suitable for high-voltage power topology operation. Additionally, HEMTs on the SL buffer exhibited minimal threshold voltage shift at negative substrate bias, allowing for efficient operation of monolithic high-voltage power topologies.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Fabrication of 150-nm AlGaN/GaN field-plated High Electron Mobility Transistors using i-line stepper

Yuji Ando, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, Jun Suda

Summary: This article presents a high throughput 150-nm-gate AlGaN/GaN HEMT process using i-line stepper lithography and a thermal reflow technique. Despite unoptimized structures, the fabricated devices showed promising performance, with a maximum drain current of 0.65 A/mm and a gate-drain breakdown voltage exceeding 200 V.

ELECTRONICS LETTERS (2021)

添加到收藏夹

Article Physics, Applied

Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

Hong-Quan Nguyen, Thanh Nguyen, Philip Tanner, Tuan-Khoa Nguyen, Abu Riduan Md Foisal, Jarred Fastier-Wooller, Tuan-Hung Nguyen, Hoang-Phuong Phan, Nam-Trung Nguyen, Dzung Viet Dao

Summary: The study demonstrates the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN HEMT and its potential as a highly sensitive pressure sensor with a strain sensitivity of 1250ppm(-1). The change in drain current is most pronounced when the gate bias is near-threshold and the drain bias is slightly larger than the saturation bias.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

Jiejie Zhu, Yingcong Zhang, Xiaohua Ma, Siyu Liu, Siqi Jing, Qing Zhu, Minhan Mi, Bin Hou, Ling Yang, Michael J. Uren, Martin Kuball, Yue Hao

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)

添加到收藏夹

Article Physics, Applied

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

Jiejie Zhu, Yingcong Zhang, Michael J. Uren, Siyu Liu, Pengfei Wang, Minhan Mi, Bin Hou, Ling Yang, Martin Kuball, Xiaohua Ma, Yue Hao

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Chemistry, Physical

Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN

Matthew D. Smith, Xu Li, Michael J. Uren, Iain G. Thayne, Martin Kuball

APPLIED SURFACE SCIENCE (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

Filip Wach, Michael J. Uren, Benoit Bakeroot, Ming Zhao, Stefaan Decoutere, Martin Kuball

IEEE ELECTRON DEVICE LETTERS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors

Durgesh C. Tripathi, Michael J. Uren, Dan Ritter

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

添加到收藏夹

Review Physics, Applied

Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs

Michael J. Uren, Martin Kuball

Summary: This article examines the impact of buffer doping on the critical performance issues of GaN high electron mobility transistors, showing that carbon can lead to the epitaxial buffer becoming p-type and electrically isolated from the two-dimensional electron gas. Simulation models are used to explain a wide range of experimental observations related to current-collapse and dynamic R-ON in power switches, as well as other phenomena in RF GaN-on-SiC devices.

JAPANESE JOURNAL OF APPLIED PHYSICS (2021)

添加到收藏夹

Article Physics, Applied

UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping

Markus Wohlfahrt, Michael J. Uren, Felix Kaess, Oleg Laboutin, Hassan Hirshy, Martin Kuball

Summary: AlGaN/GaN High Electron Mobility Transistors (HEMTs) exhibit a UV-induced persistent photoconductivity (PPC) effect, which is related to changes in electronic band bending in the buffer layer. This effect is significant only in p-type buffers and allows for quantification of deep-level doping density, with recovery times extending to several days.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond

Thomas Gerrer, James Pomeroy, Feiyuan Yang, Daniel Francis, Jim Carroll, Brian Loran, Larry Witkowski, Marty Yarborough, Michael J. Uren, Martin Kuball

Summary: The reliable operation of high-power GaN amplifiers depends on the mutual optimization of design parameters and a defined thermal budget. Finite element simulations provide design rules for GaN-on-diamond amplifier structures, showcasing better performance compared to GaN-on-SiC. Diamond substrates demonstrate superior heat dissipation capabilities, resulting in lower peak channel temperatures.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

Stefano Dalcanale, Michael J. Uren, Josephine Chang, Ken Nagamatsu, Justin A. Parke, Robert S. Howell, Martin Kuball

Summary: A novel noise analysis method was used to study leakage current during time-dependent dielectric degradation under bias stress, showing that an additional low bias noise test can detect the onset of permanent localized breakdown earlier.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

Feiyuan Yang, Michael J. Uren, Mark Gajda, Stefano Dalcanale, Serge Karboyan, James W. Pomeroy, Martin Kuball

Summary: This study investigates charge trapping in power AlGaN/GaN high electron mobility transistors, finding that high Si concentration passivation can suppress charge trapping and stress can induce negative charge trapping in the gate-drain access region. Electroluminescence (EL) measurements reveal that EL emitted near the drain edge might be obscured by the field plates, cautioning against using EL alone to locate high field regions in the device. Temperature-dependent dynamic R (ON) transient measurements suggest 'trap' responses with an activation energy of around 0.48 eV and located in the heavily carbon-doped GaN layer, explained by the leaky dielectric model.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Yuke Cao, James W. Pomeroy, Michael J. Uren, Feiyuan Yang, Martin Kuball

Summary: Electric-field-induced second harmonic generation is utilized to map the electric field distribution in the device channel of GaN-based high-electron-mobility transistors. The study shows that changes in carbon dopant concentration can significantly affect the electric field distribution in the devices, highlighting the role of dopants in altering the device characteristics. Additionally, dislocation-related leakage paths can lead to inhomogeneity in the electric field within the devices.

NATURE ELECTRONICS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

Feiyuan Yang, Manikant Singh, Michael J. Uren, Trevor Martin, Hassan Hirshy, Michael A. Casbon, Paul J. Tasker, Martin Kuball

Summary: The breakdown mechanism in 0.25-μm gate length AlGaN/GaN-on-SiC transistors is investigated using the drain current injection technique. The results show that breakdown can be divided into two stages, which are related to gate voltage levels and material characteristics.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

添加到收藏夹

Article Physics, Applied

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Yuke Cao, James W. Pomeroy, Michael J. Uren, Feiyuan Yang, Jingshan Wang, Patrick Fay, Martin Kuball

Summary: The electric field distribution of GaN-on-GaN p-n diodes with partially compensated ion-implanted edge termination (ET) was characterized using an electric field induced second harmonic generation technique (EFISHG). The effectiveness of the ET structure was confirmed by the distributed electric field from the anode to the outer edge of the ET. However, the effectiveness was found to be strongly dependent on the acceptor charge distribution in the partially compensated layer (PC) of the ET.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Article Physics, Applied

Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer

Zequan Chen, Abhishek Mishra, Aditya K. Bhat, Matthew D. Smith, Michael J. Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball

Summary: The frequency dispersion of impedance in lateral beta-Ga2O3 MOSFETs has been studied and a model has been developed to explain the phenomenon. The dispersion is caused by the resistive and capacitive coupling between the terminal contact pads and the buried conducting layer at the unintentionally-doped epitaxy/substrate interface, which also leads to a buried parallel leakage path. It is shown that the dispersion is not related to gate dielectric traps, as commonly assumed. A generalized equivalent circuit model is proposed to explain the experimental results.

APPLIED PHYSICS EXPRESS (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

Akhil S. Kumar, Michael J. Uren, Justin Parke, H. George Henry, Robert S. Howell, Martin Kuball

Summary: Multichannel RF power amplifiers provide high frequency operation, high current and RF power, and excellent linearity. By using 3D and 2D simulations, the impact of device architecture on linearity and off-state reliability can be investigated, leading to an improved linear design without compromising reliability. Linearity is assessed using a 2D approximation which is computationally efficient, while off-state reliability is evaluated using a full 3D simulation to measure peak electric field. The study suggests that introducing channel number-dependent doping can enhance transconductance-linearity, and increasing gate dielectric thickness or fin width leads to a strong increase in third order intercept, while maintaining reliability requires increased fin height to reduce electric field.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2023)

添加到收藏夹

暂无数据

© Peeref 2019-2024. All rights reserved.