期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 34, 期 6, 页码 5012-5018出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2018.2876444
关键词
Current-collapse-free; dynamic ON-resistance (R-ON); reverse recovery; vertical GaN-on-GaN devices
资金
- National Natural Science Foundation of China [51807175]
- Power Electronics Science and Education Development Program of Delta Environmental & Educational Foundation [DREG2017013]
The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic ON-resistance (R-ON) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low R-ON center dot Q(rr) figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic R-ON degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: OFF-state stress bias up to 500 V, OFF-state stress time within 10(-6)-10(2) s, high temperature up to 150 degrees C, and different load current levels.
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