期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 5, 页码 1838-1842出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2813542
关键词
2D hole gas (2DHG); AlGaN; carbon; GaN; compensation; self-compensation
资金
- ECSEL-JU Powerbase Project [662133]
- U.K. EPSRC
- Engineering and Physical Sciences Research Council [1647076] Funding Source: researchfish
Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon doping have been studied. By considering the donor density required to suppress a 2D hole gas in the undoped structure, we demonstrate that the 2 x 10(19) cm(-3) substitutional carbon incorporated during metal-organic chemical vapor deposition must be a source of donors as well as acceptors, with a donor to acceptor ratio of at least 0.4. This compensation ratio was determined based on the comparison of substrate bias experiments with TCAD simulations. This value, which was previously unknown, is a key parameter in GaN power switching high- electron-mobility transistors, since it determines the resistivity of the layer used to suppress leakage and increase breakdown voltage.
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