期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 5, 页码 658-660出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2188710
关键词
Constant current deep level optical spectroscopy (CID-DLOS); constant current deep level transient spectroscopy (CID-DLTS); dc stressing; deep levels; GaN; high-electron-mobility transistor (HEMT); metal-organic chemical vapor deposition (MOCVD); N-polar; trapping
资金
- Office of Naval Research through Design-for-Reliability Initiative
Distinct trap levels in the drain access regions of an N-polar GaN MIS-HEMT are investigated before and after semi-on dc stressing by thermal and optical trap spectroscopies. The most prominent dc stress effect was an increase in concentration of a pre-existing electron trap with an activation energy of 0.54 eV, accompanied by a decrease in concentration of an electron trap with a 0.65-eV activation energy. These distinct states had similar concentrations before stressing, with the 0.54-eV trap concentration dominating (by 6x) after stress. Deeper states revealed via optical measurements showed a mild similar to 20% increase in total concentration after stressing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据