2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
出版年份 2018 全文链接
标题
2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 112, Issue 5, Pages 052101
出版商
AIP Publishing
发表日期
2018-01-30
DOI
10.1063/1.5012866
参考文献
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