期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 214, 期 8, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201600842
关键词
AlGaN; AlN; band gap; heterostructures; ohmic contacts
资金
- Laboratory Directed Research and Development (LDRD) program at Sandia
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al0.85Ga0.15N/Al0.66Ga0.34N. However, a dry etch recess followed by n(+)-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts on a Al0.85Ga0.15N/Al0.66Ga0.34N heterostructure. Specific contact resistivity of 5x10(-3)cm(2) was achieved after annealing Ti/Al/Ni/Au metallization.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据