A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

Hot electron trapping can significantly modify the performance of GaN-based HEMTs during hard switching operation. In this letter, we present a physics-based model based on rate equations to model the trapping kinetics of hot-electrons in GaN transistors submitted to semi- ON-state stress. The model is validated through comparison with the experimental data, obtained by means of a pulsed-drain current transient setup developed ad-hoc. Hot-electron trapping is found to have logarithmic time dependence; the first 10 mu s of operation are critical in determining the current collapse during stress.

Automated summary

Hot electron trapping significantly affects the performance of GaN-based HEMTs during hard switching, with a logarithmic time dependence and critical operation within the first 10 microseconds. This was demonstrated through a physics-based model validated by experimental data obtained with a specially designed pulsed-drain current transient setup.