Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

出版年份 2017 全文链接

标题

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

作者

关键词

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出版物

IEEE ELECTRON DEVICE LETTERS

Volume 38, Issue 1, Pages 99-102

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2016-11-23

DOI

10.1109/led.2016.2631640

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