期刊
APPLIED PHYSICS LETTERS
卷 94, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3094754
关键词
aluminium compounds; deep levels; electrical conductivity; electron-hole recombination; III-V semiconductors; impurity states; magnesium; photoluminescence; semiconductor doping; ultraviolet spectra; vacancies (crystal); wide band gap semiconductors
资金
- ARO
- NSF
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0906879] Funding Source: National Science Foundation
Deep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1-xN alloys, which was identified to have the same origin as the previously reported blue line at 2.8 eV in Mg-doped GaN and was assigned to the recombination of electrons bound to the nitrogen vacancy with three positive charges (V(N)3+) and neutral Mg acceptors. Based on the measured activation energies of the Mg acceptors in AlGaN and the observed impurity emission peaks, the V-N 3+ energy levels in AlxGa1-xN have been deduced for the entire alloy range. It is demonstrated that the presence of high density of V(N)3+ deep donors translates to the reduced p-type conductivity in AlGaN alloys due to their ability for capturing free holes.
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