期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 53, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.100211
关键词
-
资金
- UE (ENIAC Joint Undertaking) in the E2CoGaN project [ENIAC-324280]
- project FP7-ICT-7 HiPoSwitch [287602]
- Progetto di Ateneo Development of normally off gallium nitride power devices for future green power applications
This paper reviews the physical mechanisms responsible for breakdown current in AlGaN/GaN high electron mobility transistors (HEMTs). Through a critical comparison between experimental data and previously published results we describe the following mechanisms, which can be responsible for the increase in drain current at high drain voltage levels, in the off-state: (i) source-drain breakdown, due to punch-through effects and/or to a poor depletion of the buffer; (ii) vertical (drain-bulk) breakdown, which can be particularly prominent when the devices are grown on a silicon substrate; (iii) breakdown of the gate-drain junction, due either to surface conduction mechanisms or to conduction through the (reverse-biased) Schottky junction at the gate; (iv) impact ionization triggered by hot electrons, that may induce an increase in drain current due to the lowering of the barrier for the injection of electrons from the source. (C) 2014 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据