Reliability studies of vertical GaN devices based on bulk GaN substrates

标题
Reliability studies of vertical GaN devices based on bulk GaN substrates
作者
关键词
GaN, Reliability, Power electronics, Bulk GaN substrates, Avalanche breakdown
出版物
MICROELECTRONICS RELIABILITY
Volume 55, Issue 9-10, Pages 1654-1661
出版商
Elsevier BV
发表日期
2015-07-17
DOI
10.1016/j.microrel.2015.07.012

向作者/读者发起求助以获取更多资源

Reprint

联系作者

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now