- Home
- Publications
- Publication Search
- Publication Details
Title
A review of Ga2O3 materials, processing, and devices
Authors
Keywords
-
Journal
Applied Physics Reviews
Volume 5, Issue 1, Pages 011301
Publisher
AIP Publishing
Online
2018-01-12
DOI
10.1063/1.5006941
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga 2 O 3 thin films grown by metal-organic chemical vapor deposition
- (2018) Daqiang Hu et al. CERAMICS INTERNATIONAL
- High quality β -Ga 2 O 3 film grown with N 2 O for high sensitivity solar-blind-ultraviolet photodetector with fast response speed
- (2018) D. Zhang et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Stabilizing the metastable γ phase in Ga 2 O 3 thin films by Cu doping
- (2018) Qi Liu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga 2 O 3
- (2018) Soohwan Jang et al. JOURNAL OF ALLOYS AND COMPOUNDS
- ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors
- (2018) M. Pavesi et al. MATERIALS CHEMISTRY AND PHYSICS
- Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
- (2017) Neil Moser et al. IEEE ELECTRON DEVICE LETTERS
- Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
- (2017) Ke Zeng et al. IEEE ELECTRON DEVICE LETTERS
- High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers
- (2017) Jiancheng Yang et al. IEEE ELECTRON DEVICE LETTERS
- Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
- (2017) Yuhao Zhang et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
- (2017) Hong Zhou et al. IEEE ELECTRON DEVICE LETTERS
- $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
- (2017) Andrew Joseph Green et al. IEEE ELECTRON DEVICE LETTERS
- An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material
- (2017) Ahmet Kaya et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Review of Silicon Carbide Power Devices and Their Applications
- (2017) Xu She et al. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
- $\beta$ -Ga2O3 Solid-State Devices for Fast Neutron Detection
- (2017) D. Szalkai et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Preparation of 2-in.-diameter (001) β-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy
- (2017) Quang Tu Thieu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition
- (2017) Daisuke Tahara et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
- (2017) Patrick H. Carey et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3
- (2017) Liheng Zhang et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on $(\bar{2}01)$ β-Ga2O3
- (2017) Makoto Kasu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects
- (2017) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Structural and photoelectrical properties of Ga 2 O 3 /SiC/Al 2 O 3 multilayers
- (2017) Y.Q. Huang et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Fast-response solar-blind ultraviolet photodetector with a graphene/ β -Ga 2 O 3 /graphene hybrid structure
- (2017) Meilin Ai et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Ab initio study of N-doped β-Ga 2 O 3 with intrinsic defects: the structural, electronic and optical properties
- (2017) Linpeng Dong et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Characterization of spin-coated gallium oxide films and application as surface passivation layer on silicon
- (2017) Yuren Xiang et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Ab initio velocity-field curves in monoclinic β-Ga2O3
- (2017) Krishnendu Ghosh et al. JOURNAL OF APPLIED PHYSICS
- Self-trapped holes in β-Ga2O3 crystals
- (2017) B. E. Kananen et al. JOURNAL OF APPLIED PHYSICS
- Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
- (2017) M. Slomski et al. JOURNAL OF APPLIED PHYSICS
- Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
- (2017) A. Fiedler et al. JOURNAL OF APPLIED PHYSICS
- Growth and characterization of β-Ga2O3 crystals
- (2017) V.I. Nikolaev et al. JOURNAL OF CRYSTAL GROWTH
- Fast growth rate of epitaxial β–Ga 2 O 3 by close coupled showerhead MOCVD
- (2017) Fikadu Alema et al. JOURNAL OF CRYSTAL GROWTH
- Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials
- (2017) Yuki Takiguchi et al. JOURNAL OF CRYSTAL GROWTH
- Thickness Tuning Photoelectric Properties of β-Ga2O3 Thin Film Based Photodetectors
- (2017) Y. H An et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature
- (2017) M Peres et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Fundamental limits on the electron mobility ofβ-Ga2O3
- (2017) Youngho Kang et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Inductively coupled plasma reactive-ion etching of β-Ga2O3: Comprehensive investigation of plasma chemistry and temperature
- (2017) Amit P. Shah et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Gallium oxide nanospheres: Effect of the post-annealing treatment
- (2017) Abdullah Haaziq Ahmad Makinudin et al. MATERIALS LETTERS
- Epitaxial growth of α-Ga 2 O 3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe 2 O 3 buffer layers
- (2017) Hiroyuki Nishinaka et al. MATERIALS LETTERS
- Mg-doped p -type β- Ga 2 O 3 thin film for solar-blind ultraviolet photodetector
- (2017) Y.P. Qian et al. MATERIALS LETTERS
- Comparative study of scintillation and optical properties of Ga 2 O 3 doped with ns 2 ions
- (2017) Yuki Usui et al. MATERIALS RESEARCH BULLETIN
- Structural properties of Eu doped gallium oxide films
- (2017) Kazuo Nishihagi et al. MATERIALS RESEARCH BULLETIN
- The deformation pattern of single crystal β-Ga 2 O 3 under nanoindentation
- (2017) Y.Q. Wu et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces
- (2017) Jared M Johnson et al. MICROSCOPY AND MICROANALYSIS
- Electrical and optical properties of Si-doped Ga2O3
- (2017) Yin Li et al. MODERN PHYSICS LETTERS B
- Diameter Tuning of β $$ \beta $$ -Ga2O3 Nanowires Using Chemical Vapor Deposition Technique
- (2017) Mukesh Kumar et al. Nanoscale Research Letters
- Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates
- (2017) Bilal Janjua et al. OPTICS EXPRESS
- Solar blind photodetector based on epitaxial zinc doped Ga2 O3 thin film (Phys. Status Solidi A 5∕2017)
- (2017) Fikadu Alema et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
- (2017) Alex Q. Huang PROCEEDINGS OF THE IEEE
- Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
- (2017) Theodore D Moustakas et al. REPORTS ON PROGRESS IN PHYSICS
- Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
- (2017) Yuichi Oshima et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire
- (2017) Mukesh Kumar et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Method of choice for the fabrication of high-qualityβ-gallium oxide-based Schottky diodes
- (2017) Stefan Müller et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy
- (2017) Elaheh Ahmadi et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Metal oxide composites in conductometric gas sensors: Achievements and challenges
- (2017) G. Korotcenkov et al. SENSORS AND ACTUATORS B-CHEMICAL
- Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy
- (2017) Jared M. Johnson et al. ULTRAMICROSCOPY
- Band alignment of Al 2 O 3 with (−201) β-Ga 2 O 3
- (2017) Patrick H. Carey et al. VACUUM
- Valence and conduction band offsets in AZO/Ga 2 O 3 heterostructures
- (2017) Patrick H. Carey et al. VACUUM
- Solar Blind Photodetectors Enabled by Nanotextured β-Ga2O3 Films Grown via Oxidation of GaAs Substrates
- (2017) Dewyani Patil-Chaudhari et al. IEEE Photonics Journal
- Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures
- (2017) Lu Huang et al. IEEE Photonics Journal
- (AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity
- (2017) Qian Feng et al. Optical Materials Express
- Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire
- (2017) Subrina Rafique et al. Optical Materials Express
- Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
- (2017) Patrick H. Carey et al. AIP Advances
- Room-Temperature Fabricated Amorphous Ga2 O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates
- (2017) Shujuan Cui et al. Advanced Optical Materials
- Extraction of Migration Energies and Role of Implant Damage on Thermal Stability of Deuterium in Ga 2 O 3
- (2017) Ribhu Sharma et al. ECS Journal of Solid State Science and Technology
- Communication—Electrical Characterization of β-Ga 2 O 3 Single Crystal Substrates
- (2017) Yoshitaka Nakano ECS Journal of Solid State Science and Technology
- Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga 2 O 3
- (2017) Marko J. Tadjer et al. ECS Journal of Solid State Science and Technology
- Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga 2 O 3 Micro-Flake
- (2017) Sooyeoun Oh et al. ECS Journal of Solid State Science and Technology
- Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3
- (2017) Shihyun Ahn et al. ECS Journal of Solid State Science and Technology
- Perspective—Opportunities and Future Directions for Ga 2 O 3
- (2017) Michael A. Mastro et al. ECS Journal of Solid State Science and Technology
- Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond
- (2017) Munho Kim et al. Journal of Materials Chemistry C
- Diameter Tuning of β $$ \beta $$ -Ga2O3 Nanowires Using Chemical Vapor Deposition Technique
- (2017) Mukesh Kumar et al. Nanoscale Research Letters
- Energy band offsets of dielectrics on InGaZnO4
- (2017) David C. Hays et al. Applied Physics Reviews
- Group-III Sesquioxides: Growth, Physical Properties and Devices
- (2017) Holger von Wenckstern Advanced Electronic Materials
- First-principles calculations of electronic and optical properties of aluminum-doped β-Ga 2 O 3 with intrinsic defects
- (2017) Xiaofan Ma et al. Results in Physics
- Band gap of corundumlike α−Ga2O3 determined by absorption and ellipsometry
- (2017) A. Segura et al. PHYSICAL REVIEW MATERIALS
- Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3
- (2017) Linpeng Dong et al. Scientific Reports
- Perovskite Nanoparticle-Sensitized Ga2O3 Nanorod Arrays for CO Detection at High Temperature
- (2016) Hui-Jan Lin et al. ACS Applied Materials & Interfaces
- Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®
- (2016) Masaya Oda et al. Applied Physics Express
- Phase diagram and polarization of stable phases of (Ga1−xInx)2O3
- (2016) Maria Barbara Maccioni et al. Applied Physics Express
- Reduction in edge dislocation density in corundum-structured α-Ga2O3layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3buffer layers
- (2016) Riena Jinno et al. Applied Physics Express
- All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3
- (2016) Yoshihiro Kokubun et al. Applied Physics Express
- Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction
- (2016) Yuichi Oshima et al. Applied Physics Express
- First-principles calculations of the near-edge optical properties of β-Ga2O3
- (2016) Kelsey A. Mengle et al. APPLIED PHYSICS LETTERS
- Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3
- (2016) Philip Weiser et al. APPLIED PHYSICS LETTERS
- Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2O3 crystal
- (2016) Krishnendu Ghosh et al. APPLIED PHYSICS LETTERS
- Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
- (2016) Xiaochuan Xia et al. APPLIED PHYSICS LETTERS
- Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
- (2016) T. Onuma et al. APPLIED PHYSICS LETTERS
- Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3
- (2016) Shihyun Ahn et al. APPLIED PHYSICS LETTERS
- Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
- (2016) Shihyun Ahn et al. APPLIED PHYSICS LETTERS
- Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy
- (2016) Zhengwei Chen et al. APPLIED PHYSICS LETTERS
- Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
- (2016) Kelson D. Chabak et al. APPLIED PHYSICS LETTERS
- Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
- (2016) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
- (2016) Y. Cao et al. APPLIED PHYSICS LETTERS
- Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
- (2016) Z. Zhang et al. APPLIED PHYSICS LETTERS
- Intrinsic electron mobility limits inβ-Ga2O3
- (2016) Nan Ma et al. APPLIED PHYSICS LETTERS
- Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
- (2016) Subrina Rafique et al. APPLIED PHYSICS LETTERS
- Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption
- (2016) Patrick Vogt et al. APPLIED PHYSICS LETTERS
- Growth and characterization of spindle-like Ga 2 O 3 nanocrystals by electrochemical reaction in hydrofluoric solution
- (2016) Lungang Feng et al. APPLIED SURFACE SCIENCE
- Ohmic contacts to Gallium Nitride materials
- (2016) Giuseppe Greco et al. APPLIED SURFACE SCIENCE
- Morphological and crystal structural characterization of Ga2O3 particles synthesized by a controlled precipitation and polymerized complex method
- (2016) Jong-Yeol Jung et al. CERAMICS INTERNATIONAL
- Characterization of vertical Au/β-Ga2O3single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
- (2016) X Z Liu et al. Chinese Physics B
- Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
- (2016) Man Hoi Wong et al. IEEE ELECTRON DEVICE LETTERS
- Al2O3/ $\beta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
- (2016) Hong Zhou et al. IEEE ELECTRON DEVICE LETTERS
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
- (2016) Andrew J. Green et al. IEEE ELECTRON DEVICE LETTERS
- Comparison Study of $\beta $ -Ga2O3Photodetectors on Bulk Substrate and Sapphire
- (2016) Qian Feng et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
- (2016) Francesco Mezzadri et al. INORGANIC CHEMISTRY
- Conduction mechanism in highly doped β-Ga2O3$(\bar{2}01)$ single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
- (2016) Toshiyuki Oishi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Current status of Ga2O3power devices
- (2016) Masataka Higashiwaki et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Conductivity control of Sn-doped α-Ga2O3thin films grown on sapphire substrates
- (2016) Kazuaki Akaiwa et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Heteroepitaxial growth of ε-Ga2O3thin films on cubic (111) MgO and (111) yttria-stablized zirconia substrates by mist chemical vapor deposition
- (2016) Hiroyuki Nishinaka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition
- (2016) Sam-dong Lee et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Formation of indium–tin oxide ohmic contacts for β-Ga2O3
- (2016) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices
- (2016) Shizuo Fujita et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Defect characterization of β-Ga2O3single crystals grown by vertical Bridgman method
- (2016) Etsuko Ohba et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer
- (2016) Man Hoi Wong et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth
- (2016) Akito Kuramata et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Origins of etch pits in β-Ga2O3(010) single crystals
- (2016) Kenji Hanada et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Structural evaluation of defects in β-Ga2O3single crystals grown by edge-defined film-fed growth process
- (2016) Osamu Ueda et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Relationship between crystal defects and leakage current in β-Ga2O3Schottky barrier diodes
- (2016) Makoto Kasu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Observation of nanometer-sized crystalline grooves in as-grown β-Ga2O3single crystals
- (2016) Kenji Hanada et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates
- (2016) Mai Hattori et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- β -Ga 2 O 3 / p -Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity
- (2016) X.C. Guo et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Electronic properties of the residual donor in unintentionally doped β-Ga2O3
- (2016) N. T. Son et al. JOURNAL OF APPLIED PHYSICS
- Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
- (2016) Andrew M. Armstrong et al. JOURNAL OF APPLIED PHYSICS
- Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
- (2016) R. Schewski et al. JOURNAL OF APPLIED PHYSICS
- The orientational relationship between monoclinic β-Ga2O3 and cubic NiO
- (2016) Shinji Nakagomi et al. JOURNAL OF CRYSTAL GROWTH
- Hetero-epitaxy of ε-Ga 2 O 3 layers by MOCVD and ALD
- (2016) F. Boschi et al. JOURNAL OF CRYSTAL GROWTH
- Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air
- (2016) K. Hoshikawa et al. JOURNAL OF CRYSTAL GROWTH
- Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties
- (2016) Yao Yao et al. JOURNAL OF ELECTRONIC MATERIALS
- Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
- (2016) Marko J. Tadjer et al. JOURNAL OF ELECTRONIC MATERIALS
- Influence of oxygen vacancies on the photoresponse ofβ-Ga2O3/SiCn–ntype heterojunctions
- (2016) Y H An et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Oxide bipolar electronics: materials, devices and circuits
- (2016) Marius Grundmann et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3nanowires
- (2016) Mukesh Kumar et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Theoretical and experimental investigation of optical absorption anisotropy inβ-Ga2O3
- (2016) F Ricci et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Properties of (Ga1−xInx)2O3over the wholexrange
- (2016) M B Maccioni et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- P-type transparent conducting oxides
- (2016) Kelvin H L Zhang et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy
- (2016) V.I. Nikolaev et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- High-level damage saturation below amorphisation in ion implanted β-Ga2O3
- (2016) Elke Wendler et al. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
- β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector
- (2016) X.Z. Liu et al. OPTICAL MATERIALS
- Large conduction band offset at SiO2/β-Ga2O3heterojunction determined by X-ray photoelectron spectroscopy
- (2016) Keita Konishi et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
- (2016) Janghyuk Kim et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Analysis of the scattering mechanisms controlling electron mobility inβ-Ga2O3crystals
- (2016) Antonella Parisini et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Influence of Li doping on the morphology and luminescence of Ga2O3microrods grown by a vapor-solid method
- (2016) I López et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Chlorine-based dry etching ofβ-Ga2O3
- (2016) Jack E Hogan et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulatingβ-Ga2O3single crystal along [100], [010] and [001]
- (2016) M Handwerg et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga2O3Schottky diodes
- (2016) Asanka Jayawardena et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Recent progress in Ga2O3power devices
- (2016) Masataka Higashiwaki et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Solar blind avalanche photodetector based on the cation exchange growth of β-Ga2O3/SnO2 bilayer heterostructure thin film
- (2016) Waleed E. Mahmoud SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Effects of dopant contents on structural, morphological and optical properties of Er doped Ga 2 O 3 films
- (2016) Zhengwei Chen et al. SUPERLATTICES AND MICROSTRUCTURES
- Growth and morphology control of β -Ga 2 O 3 nanostructures by atmospheric-pressure CVD
- (2016) Tomoaki Terasako et al. THIN SOLID FILMS
- Formation of various phases of gallium oxide films depending on substrate planes and deposition gases
- (2016) Housei Akazawa VACUUM
- Dual-band photodetector with a hybrid Au-nanoparticles/β-Ga2O3 structure
- (2016) Y. H. An et al. RSC Advances
- β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
- (2016) L. X. Qian et al. AIP Advances
- Structure property relationships in gallium oxide thin films grown by pulsed laser deposition
- (2016) Lauren M. Garten et al. MRS Communications
- Optical Signature of the Electron Injection in Ga 2 O 3
- (2016) Jonathan Lee et al. ECS Journal of Solid State Science and Technology
- Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures
- (2016) Sooyeoun Oh et al. ECS Journal of Solid State Science and Technology
- Contacting Mechanically Exfoliated β-Ga 2 O 3 Nanobelts for (Opto)electronic Device Applications
- (2016) Jinho Bae et al. ECS Journal of Solid State Science and Technology
- Vertical GaN Junction Barrier Schottky Diodes
- (2016) Andrew D. Koehler et al. ECS Journal of Solid State Science and Technology
- Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric
- (2016) Marko J. Tadjer et al. ECS Journal of Solid State Science and Technology
- Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios
- (2016) Shinji Nakagomi et al. ECS Journal of Solid State Science and Technology
- Thermal Stability of Implanted or Plasma Exposed Deuterium in Single Crystal Ga2O3
- (2016) Shihyun Ahn et al. ECS Journal of Solid State Science and Technology
- Band Alignments of Atomic Layer Deposited ZrO 2 and HfO 2 High-k Dielectrics with (-201) β-Ga 2 O 3
- (2016) Virginia D. Wheeler et al. ECS Journal of Solid State Science and Technology
- Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method
- (2016) Zbigniew Galazka et al. ECS Journal of Solid State Science and Technology
- Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga 2 O 3 Layers Grown by MOVPE on (010)-Oriented Substrates
- (2016) Michele Baldini et al. ECS Journal of Solid State Science and Technology
- Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity
- (2016) Sooyeoun Oh et al. Journal of Materials Chemistry C
- Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals
- (2015) Stefan Müller et al. Applied Physics Express
- High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
- (2015) Toshiyuki Oishi et al. Applied Physics Express
- Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates
- (2015) Yuichi Oshima et al. Applied Physics Express
- Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy
- (2015) Guo-Ling Li et al. APPLIED PHYSICS LETTERS
- Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
- (2015) Jordan D. Greenlee et al. APPLIED PHYSICS LETTERS
- Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)
- (2015) Ye Jia et al. APPLIED PHYSICS LETTERS
- Electrical compensation by Ga vacancies in Ga2O3 thin films
- (2015) E. Korhonen et al. APPLIED PHYSICS LETTERS
- Anisotropic thermal conductivity in single crystal β-gallium oxide
- (2015) Zhi Guo et al. APPLIED PHYSICS LETTERS
- Surface properties of annealed semiconducting β-Ga2O3 (100) single crystals for epitaxy
- (2015) A. Navarro-Quezada et al. APPLIED SURFACE SCIENCE
- Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method
- (2015) Yuanpeng Chen et al. APPLIED SURFACE SCIENCE
- Synthesis of β-Ga2O3 microstructures with efficient photocatalytic activity by annealing of GaSe single crystal
- (2015) Emanuela Filippo et al. APPLIED SURFACE SCIENCE
- Transparent conducting tin-doped Ga2O3 films deposited on MgAl2O4 (100) substrates by MOCVD
- (2015) Wei Mi et al. CERAMICS INTERNATIONAL
- Humidity sensor based on Ga2O3 nanorods doped with Na+ and K+ from GaN powder
- (2015) Ding Wang et al. CERAMICS INTERNATIONAL
- Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition
- (2015) Giang T. Dang et al. IEEE ELECTRON DEVICE LETTERS
- Mist-CVD Grown Sn-Doped $\alpha $ -Ga2O3 MESFETs
- (2015) Giang T. Dang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
- (2015) Pane-Chane Chao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Temperature-Dependent Characteristics of GaN Homojunction Rectifiers
- (2015) Tsung-Ting Kao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications
- (2015) Nathan E. Ives et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping
- (2015) Sam-Dong Lee et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
- (2015) Takeyoshi Onuma et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Optical properties of β-Ga2O3nanorods synthesized by a simple and cost-effective method using egg white solution
- (2015) Santi Phumying et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Single-crystal gallium oxide-based biomolecular modified diode for nucleic acid sensing
- (2015) Tanzilur Rahman et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Characterization of defects in β-Ga2O3 single crystals
- (2015) Katsuhiko Nakai et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Wide-bandgap semiconductor materials: For their full bloom
- (2015) Shizuo Fujita JAPANESE JOURNAL OF APPLIED PHYSICS
- Radiation Effects in GaN-Based High Electron Mobility Transistors
- (2015) S. J. Pearton et al. JOM
- A facile route to porous beta-gallium oxide nanowires-reduced graphene oxide hybrids with enhanced photocatalytic efficiency
- (2015) X. Xu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3
- (2015) Christian Kranert et al. JOURNAL OF APPLIED PHYSICS
- Quasi-heteroepitaxial growth of β-Ga 2 O 3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy
- (2015) Yuichi Oshima et al. JOURNAL OF CRYSTAL GROWTH
- Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
- (2015) Xuejian Du et al. JOURNAL OF MATERIALS SCIENCE
- Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
- (2015) Michele Baldini et al. JOURNAL OF MATERIALS SCIENCE
- On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts
- (2015) Winfried Mönch JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition
- (2015) Fabi Zhang et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Effect of Phase Junction Structure on the Photocatalytic Performance in Overall Water Splitting: Ga2O3 Photocatalyst as an Example
- (2015) Shaoqing Jin et al. Journal of Physical Chemistry C
- β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy
- (2015) Stephen W. Kaun et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Non-aqueous synthesis of blue light emitting γ-Ga2O3 and c-In2O3 nanostructures from their ethylene glycolate precursors
- (2015) Anshu Singhal et al. MATERIALS LETTERS
- A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film
- (2015) Hongwei Liang et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process
- (2015) G. C. Hu et al. OPTICS EXPRESS
- Development of solar-blind photodetectors based on Si-implanted β-Ga_2O_3
- (2015) Sooyeoun Oh et al. OPTICS EXPRESS
- Brillouin zone and band structure of β-Ga2O3
- (2015) Hartwin Peelaers et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
- (2015) Thomas G. Allen et al. Physica Status Solidi-Rapid Research Letters
- Tailoring the electronic structure of β-Ga2O3 by non-metal doping from hybrid density functional theory calculations
- (2015) Weiyan Guo et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Hydrogen centers and the conductivity ofIn2O3single crystals
- (2015) Weikai Yin et al. PHYSICAL REVIEW B
- (InxGa1−x)2O3alloys for transparent electronics
- (2015) Hartwin Peelaers et al. PHYSICAL REVIEW B
- Effect of indium as a surfactant in (Ga1−xInx)2O3epitaxial growth onβ-Ga2O3by metal organic vapour phase epitaxy
- (2015) M Baldini et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Bethe–Salpeter calculation of optical-absorption spectra of In2O3and Ga2O3
- (2015) Joel B Varley et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction
- (2015) Shinji Nakagomi et al. SENSORS AND ACTUATORS A-PHYSICAL
- Epitaxial growth of gallium oxide films on c-cut sapphire substrate
- (2015) W. Seiler et al. THIN SOLID FILMS
- Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors
- (2015) Fei-Peng Yu et al. Optical Materials Express
- Multi-functional mesoporous β-Ga2O3: Cr3+ nanorod with long lasting near infrared luminescence for in vivo imaging and drug delivery
- (2015) Xin-Shi Wang et al. RSC Advances
- Simulation of Radiation Effects in AlGaN/GaN HEMTs
- (2015) E. E. Patrick et al. ECS Journal of Solid State Science and Technology
- Review—Ionizing Radiation Damage Effects on GaN Devices
- (2015) S. J. Pearton et al. ECS Journal of Solid State Science and Technology
- Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5–8.5 eV
- (2015) C. Sturm et al. APL Materials
- Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells
- (2014) Yun Seog Lee et al. ADVANCED MATERIALS
- Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy
- (2014) Hironori Okumura et al. Applied Physics Express
- Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy
- (2014) Hisashi Murakami et al. Applied Physics Express
- Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)
- (2014) Robert Schewski et al. Applied Physics Express
- Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide
- (2014) T. G. Allen et al. APPLIED PHYSICS LETTERS
- Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
- (2014) D. Y. Guo et al. APPLIED PHYSICS LETTERS
- Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
- (2014) Takafumi Kamimura et al. APPLIED PHYSICS LETTERS
- Wide bandgap engineering of (AlGa)2O3 films
- (2014) Fabi Zhang et al. APPLIED PHYSICS LETTERS
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- (2014) Wan Sik Hwang et al. APPLIED PHYSICS LETTERS
- Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation
- (2014) Travis J. Anderson et al. IEEE ELECTRON DEVICE LETTERS
- See-Through $\hbox{Ga}_{2}\hbox{O}_{3}$ Solar-Blind Photodetectors for Use in Harsh Environments
- (2014) Tzu-Chiao Wei et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes
- (2014) Steve J. Pearton et al. INTERNATIONAL MATERIALS REVIEWS
- Tunable photoluminescent properties of Eu-doped β-Ga2O3phosphor thin films prepared via excimer laser-assisted metal organic decomposition
- (2014) Tetsuo Tsuchiya et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- InGaAs axial-junction nanowire-array solar cells
- (2014) Eiji Nakai et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow
- (2014) Toshiyuki Kawaharamura JAPANESE JOURNAL OF APPLIED PHYSICS
- Electrical characteristics of β-Ga2O3 thin films grown by PEALD
- (2014) Halit Altuntas et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Contrasting the experimental properties of hydrogen in SnO2, In2O3, and TiO2
- (2014) Michael Stavola et al. JOURNAL OF APPLIED PHYSICS
- Behaviour of hydrogen in wide band gap oxides
- (2014) H. Li et al. JOURNAL OF APPLIED PHYSICS
- Method of choice for fabrication of high-quality ZnO-based Schottky diodes
- (2014) Stefan Müller et al. JOURNAL OF APPLIED PHYSICS
- On the bulk β-Ga2O3 single crystals grown by the Czochralski method
- (2014) Zbigniew Galazka et al. JOURNAL OF CRYSTAL GROWTH
- Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy
- (2014) Kazushiro Nomura et al. JOURNAL OF CRYSTAL GROWTH
- Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
- (2014) Kohei Sasaki et al. JOURNAL OF CRYSTAL GROWTH
- Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films
- (2014) Shizuo Fujita et al. JOURNAL OF CRYSTAL GROWTH
- Characterization of homoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition
- (2014) Xuejian Du et al. JOURNAL OF CRYSTAL GROWTH
- Evolution of the faceting, morphology and aspect ratio of gallium oxide nanowires grown by vapor–solid deposition
- (2014) Ian D. Hosein et al. JOURNAL OF CRYSTAL GROWTH
- Polarized Raman spectra in β-Ga2O3 single crystals
- (2014) T. Onuma et al. JOURNAL OF CRYSTAL GROWTH
- Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
- (2014) Nick M. Sbrockey et al. JOURNAL OF ELECTRONIC MATERIALS
- Characterization of Structural Disorder in γ-Ga2O3
- (2014) Helen. Y. Playford et al. Journal of Physical Chemistry C
- β-Ga2O3nanowires for an ultraviolet light selective frequency photodetector
- (2014) I López et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Sources ofn-type conductivity in GaInO3
- (2014) V Wang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Study of iron-catalysed growth ofβ-Ga2O3nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques
- (2014) Sudheer Kumar et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Crossed Ga2O3/SnO2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution
- (2014) Gema Martínez-Criado et al. NANO LETTERS
- Compensating vacancy defects in Sn- and Mg-dopedIn2O3
- (2014) E. Korhonen et al. PHYSICAL REVIEW B
- Three-Dimensional Imaging of Individual Dopant Atoms inSrTiO3
- (2014) Jinwoo Hwang et al. PHYSICAL REVIEW LETTERS
- High sensing response of β-Ga2O3 thin film towards ammonia vapours: Influencing factors at room temperature
- (2014) R. Pandeeswari et al. SENSORS AND ACTUATORS B-CHEMICAL
- High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Orientedβ-Ga2O3Nanobelts
- (2014) Rujia Zou et al. Small
- Wide bandgap engineering of (GaIn)2O3 films
- (2014) Fabi Zhang et al. SOLID STATE COMMUNICATIONS
- Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
- (2014) Daoyou Guo et al. Optical Materials Express
- A perspective on electrical energy storage
- (2014) John B. Goodenough et al. MRS Communications
- Raman enhancement by graphene-Ga2O3 2D bilayer film
- (2014) Yun Zhu et al. Nanoscale Research Letters
- Carbon as a Shallow Donor in Transparent Conducting Oxides
- (2014) J. L. Lyons et al. Physical Review Applied
- Will Czochralski Growth of Sapphire Once Again Prevail?
- (2013) F.J. Bruni et al. ACTA PHYSICA POLONICA A
- Photocatalytic decomposition of perfluorooctanoic acid in pure water and sewage water by nanostructured gallium oxide
- (2013) Tian Shao et al. APPLIED CATALYSIS B-ENVIRONMENTAL
- Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts
- (2013) Kohei Sasaki et al. Applied Physics Express
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
- (2013) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
- (2013) Shinji Nakagomi et al. APPLIED PHYSICS LETTERS
- Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
- (2013) T. Onuma et al. APPLIED PHYSICS LETTERS
- Synthesis of one-dimensional Ga 2 O 3 nanostructures via high-energy ball milling and annealing of GaN
- (2013) A.K. Narayana Swamy et al. CERAMICS INTERNATIONAL
- Low-Temperature MOCVD of Crystalline Ga2O3Nanowires usingtBu3Ga
- (2013) Stephan Schulz et al. CHEMICAL VAPOR DEPOSITION
- Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction
- (2013) Helen Y. Playford et al. CHEMISTRY-A EUROPEAN JOURNAL
- AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz
- (2013) D.C. Dumka et al. ELECTRONICS LETTERS
- $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
- (2013) Kohei Sasaki et al. IEEE ELECTRON DEVICE LETTERS
- ${\rm Ga}_{2}{\rm O}_{3}$ Nanowire Photodetector Prepared on ${\rm SiO}_{2}/{\rm Si}$ Template
- (2013) Y. L. Wu et al. IEEE SENSORS JOURNAL
- Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
- (2013) Jin Chen et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Formation of Semi-Insulating Layers on Semiconducting β-Ga2O3Single Crystals by Thermal Oxidation
- (2013) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- A comparative study of β-Ga2O3 nanowires grown on different substrates using CVD technique
- (2013) Sudheer Kumar et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Insertion of lithium ions into TiO2 (rutile) crystals: An electron paramagnetic resonance study of the Li-associated Ti3+ small polaron
- (2013) A. T. Brant et al. JOURNAL OF APPLIED PHYSICS
- First-principles calculations of the electronic structure and defects of Al2O3
- (2013) D. Liu et al. JOURNAL OF APPLIED PHYSICS
- MBE grown Ga2O3 and its power device applications
- (2013) Kohei Sasaki et al. JOURNAL OF CRYSTAL GROWTH
- Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition
- (2013) F.B. Zhang et al. JOURNAL OF CRYSTAL GROWTH
- Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
- (2013) D. Gogova et al. JOURNAL OF CRYSTAL GROWTH
- Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films
- (2013) S. Sampath Kumar et al. Journal of Physical Chemistry C
- Influence of Sn and Cr Doping on Morphology and Luminescence of Thermally Grown Ga2O3 Nanowires
- (2013) Iñaki López et al. Journal of Physical Chemistry C
- Review of radiation damage in GaN-based materials and devices
- (2013) Stephen J. Pearton et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)
- (2013) Wei Mi et al. MATERIALS LETTERS
- Recent development of gallium oxide thin film on GaN
- (2013) Hooi Shy Oon et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Growth of β-Ga2O3and GaN nanowires on GaN for photoelectrochemical hydrogen generation
- (2013) Jih-Shang Hwang et al. NANOTECHNOLOGY
- Ultraviolet–green photoluminescence of β-Ga2O3 films deposited on MgAl6O10 (100) substrate
- (2013) Wei Mi et al. OPTICAL MATERIALS
- Development of gallium oxide power devices
- (2013) Masataka Higashiwaki et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition
- (2013) Daniel Splith et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy
- (2013) Guenter Wagner et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Control of the conductivity of Si-doped β-Ga2O3thin films via growth temperature and pressure
- (2013) Stefan Müller et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices
- (2013) Sudheer Kumar et al. Physica Status Solidi-Rapid Research Letters
- Intrinsic small polarons in rutile TiO2
- (2013) Shan Yang et al. PHYSICAL REVIEW B
- Ab initiocalculations on the defect structure ofβ-Ga2O3
- (2013) T. Zacherle et al. PHYSICAL REVIEW B
- Hydrogen gas sensor with self temperature compensation based on β-Ga2O3 thin film
- (2013) Shinji Nakagomi et al. SENSORS AND ACTUATORS B-CHEMICAL
- Low temperature Ga2O3 atomic layer deposition using gallium tri-isopropoxide and water
- (2013) Dong-won Choi et al. THIN SOLID FILMS
- Advances in ZnO-based materials for light emitting diodes
- (2013) S.J Pearton et al. Current Opinion in Chemical Engineering
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- (2012) Kohei Sasaki et al. Applied Physics Express
- The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures
- (2012) B. Kramm et al. APPLIED PHYSICS LETTERS
- Resonant cavity modes in gallium oxide microwires
- (2012) Iñaki López et al. APPLIED PHYSICS LETTERS
- Band bending and surface defects in β-Ga2O3
- (2012) T. C. Lovejoy et al. APPLIED PHYSICS LETTERS
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
- (2012) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
- (2012) M. Mohamed et al. APPLIED PHYSICS LETTERS
- Characterization of oxygen deficient gallium oxide films grown by PLD
- (2012) A. Petitmangin et al. APPLIED SURFACE SCIENCE
- Fabrication and CO gas-sensing properties of Pt-functionalized Ga2O3 nanowires
- (2012) Hyunsu Kim et al. CERAMICS INTERNATIONAL
- Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
- (2012) A. Akturk et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Electrical Conductive Corundum-Structured $\alpha$-Ga$_{2}$O$_{3}$ Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition
- (2012) Kazuaki Akaiwa et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Evaluation of Misfit Relaxation in $\alpha$-Ga$_{2}$O$_{3}$ Epitaxial Growth on $\alpha$-Al$_{2}$O$_{3}$ Substrate
- (2012) Kentaro Kaneko et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Growth and Band Gap Control of Corundum-Structured $\alpha$-(AlGa)$_{2}$O$_{3}$ Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition
- (2012) Hiroshi Ito et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Successful Growth of Conductive Highly Crystalline Sn-Doped $\alpha$-Ga$_{2}$O$_{3}$ Thin Films by Fine-Channel Mist Chemical Vapor Deposition
- (2012) Toshiyuki Kawaharamura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition
- (2012) Takayoshi Oshima et al. JOURNAL OF CRYSTAL GROWTH
- Phase separation in oxygen deficient gallium oxide films grown by pulsed-laser deposition
- (2012) C. Hebert et al. MATERIALS CHEMISTRY AND PHYSICS
- Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition
- (2012) Sin-Liang Ou et al. MATERIALS CHEMISTRY AND PHYSICS
- Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells
- (2012) Aravind Kumar Chandiran et al. NANO LETTERS
- The effect of Ga content on In2xGa2−2xO3nanowire transistor characteristics
- (2012) Misook Suh et al. NANOTECHNOLOGY
- Bond angles for O-H defects in SnO2from polarization properties of their vibrational modes
- (2012) Figen Bekisli et al. PHYSICAL REVIEW B
- Small polaron characteristics of an OD center in TiO2studied by infrared spectroscopy
- (2012) Figen Bekisli et al. PHYSICAL REVIEW B
- Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides
- (2012) J. B. Varley et al. PHYSICAL REVIEW B
- Effect of charged dislocation walls on mobility in GaN epitaxial layers
- (2012) S. E. Krasavin SEMICONDUCTORS
- Resistive switching characteristics of gallium oxide for nonvolatile memory application
- (2012) Jyun-Bao Yang et al. THIN SOLID FILMS
- Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique
- (2012) Yu Lv et al. VACUUM
- Radiation effects in GaN materials and devices
- (2012) Alexander Y. Polyakov et al. Journal of Materials Chemistry C
- Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
- (2012) Wei Wei et al. Nanoscale Research Letters
- Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer
- (2011) Rikiya Suzuki et al. APPLIED PHYSICS LETTERS
- Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres
- (2011) N.F. Santos et al. APPLIED SURFACE SCIENCE
- A CMOS label-free DNA sensor using electrostatic induction of molecular charges
- (2011) Kang-Ho Lee et al. BIOSENSORS & BIOELECTRONICS
- Band alignment of Ga2O3/6H-SiC heterojunction
- (2011) Shao-Hui Chang et al. Chinese Physics B
- Study of structural, elastic and electronic properties of GdX (X=Bi, Sb) compounds using LSDA and LSDA+U approach
- (2011) N. Boukhari et al. COMPUTATIONAL MATERIALS SCIENCE
- A Ga2O3underlayer as an isomorphic template for ultrathin hematite films toward efficient photoelectrochemical water splitting
- (2011) Takashi Hisatomi et al. FARADAY DISCUSSIONS
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
- (2011) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
- (2011) Marko J. Tadjer et al. IEEE ELECTRON DEVICE LETTERS
- Hydrogen donors and Ti3+ ions in reduced TiO2 crystals
- (2011) A. T. Brant et al. JOURNAL OF APPLIED PHYSICS
- Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
- (2011) K. Irmscher et al. JOURNAL OF APPLIED PHYSICS
- Electron-spin resonance of transparent conductive oxide β-Ga2O3
- (2011) Mitsuo Yamaga et al. JOURNAL OF NON-CRYSTALLINE SOLIDS
- Conductivity in transparent oxide semiconductors
- (2011) P D C King et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Hydrogenated cation vacancies in semiconducting oxides
- (2011) J B Varley et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Structural and optical properties of Ga2O3:In films deposited on MgO (100) substrates by MOCVD
- (2011) Lingyi Kong et al. JOURNAL OF SOLID STATE CHEMISTRY
- Etched Surface Morphology of Heteroepitaxial Nonpolar (1120) and Semipolar (1122) GaN Films by Photoenhanced Chemical Wet Etching
- (2011) Kwang Hyeon Baik et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions
- (2011) Younghun Jung et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Effect of the doped nitrogen on the optical properties of β-Ga2O3 nanowires
- (2011) Li-Wei Chang et al. MATERIALS LETTERS
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts
- (2011) Liang Li et al. Nanoscale
- Cathodoluminescence of rare earth implanted Ga2O3and GeO2nanostructures
- (2011) E Nogales et al. NANOTECHNOLOGY
- Experimental electronic structure of In2O3and Ga2O3
- (2011) Christoph Janowitz et al. NEW JOURNAL OF PHYSICS
- Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si
- (2011) Kenichiro Takakura et al. PHYSICA B-CONDENSED MATTER
- Eu3+-doped β-Ga2O3 nanophosphors: annealing effect, electronic structure and optical spectroscopy
- (2011) Haomiao Zhu et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Hydrogen impurities and shallow donors in SnO2studied by infrared spectroscopy
- (2011) Figen Bekisli et al. PHYSICAL REVIEW B
- Infrared absorption of the hydrogen donor in rutile TiO2
- (2011) F. Herklotz et al. PHYSICAL REVIEW B
- Assessment of waveguiding properties of gallium oxide nanostructures by angle resolved cathodoluminescence in a scanning electron microscope
- (2011) Emilio Nogales et al. ULTRAMICROSCOPY
- Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
- (2010) Joshua D. Caldwell et al. ACS Nano
- Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection
- (2010) Yanbo Li et al. ADVANCED FUNCTIONAL MATERIALS
- Fabrication and characteristics of N-doped β-Ga2O3 nanowires
- (2010) L. L. Liu et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity
- (2010) P. D. C. King et al. APPLIED PHYSICS LETTERS
- Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
- (2010) Sang-Yun Sung et al. APPLIED PHYSICS LETTERS
- Oxygen vacancies and donor impurities in β-Ga2O3
- (2010) J. B. Varley et al. APPLIED PHYSICS LETTERS
- The electronic structure of β-Ga2O3
- (2010) M. Mohamed et al. APPLIED PHYSICS LETTERS
- Development of an electrochemical DNA biosensor with a high sensitivity of fM by dendritic gold nanostructure modified electrode
- (2010) Feng Li et al. BIOSENSORS & BIOELECTRONICS
- Preparation and NO2-gas sensing property of individual β-Ga2O3nanobelt
- (2010) Ma Hai-Lin et al. Chinese Physics B
- Single-source precursors to gallium and indium oxide thin films
- (2010) Leanne G. Bloor et al. COORDINATION CHEMISTRY REVIEWS
- Czochralski growth and characterization of β-Ga2O3 single crystals
- (2010) Z. Galazka et al. CRYSTAL RESEARCH AND TECHNOLOGY
- A $\beta$-$\hbox{Ga}_{2} \hbox{O} _{3}$ Solar-Blind Photodetector Prepared by Furnace Oxidization of GaN Thin Film
- (2010) W. Y. Weng et al. IEEE SENSORS JOURNAL
- β-Ga2O3 growth by plasma-assisted molecular beam epitaxy
- (2010) Min-Ying Tsai et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Functionalized Ga2O3Nanowires as Active Material in Room Temperature Capacitance-Based Gas Sensors
- (2010) Lena Mazeina et al. LANGMUIR
- Ion beam doping of semiconductor nanowires
- (2010) C. Ronning et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Thermoreflectance characterization of β-Ga_2O_3 thin-film nanostrips
- (2010) Ching-Hwa Ho et al. OPTICS EXPRESS
- First-principles study on electronic structure and optical properties of Sn-doped β-Ga2O3
- (2010) Yijun Zhang et al. PHYSICA B-CONDENSED MATTER
- Growth behavior of β-Ga2O3nanomaterials synthesized by catalyst-free thermal evaporation
- (2010) Kwon Koo Cho et al. PHYSICA SCRIPTA
- Hydrogen donors inSnO2studied by infrared spectroscopy and first-principles calculations
- (2010) W. M. Hlaing Oo et al. PHYSICAL REVIEW B
- Fluorine donors andTi3+ions inTiO2crystals
- (2010) Shan Yang et al. PHYSICAL REVIEW B
- Dissociation of H2 molecule on the β-Ga2O3 (100)B surface: The critical role of oxygen vacancy
- (2010) Yu Yang et al. PHYSICS LETTERS A
- GaN-based p-type metal-oxide–semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method
- (2010) Ya-Lan Chiou et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Electronic structure and magnetic properties in Nitrogen-doped from density functional calculations
- (2010) Wen-Zhi Xiao et al. SOLID STATE COMMUNICATIONS
- Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure
- (2010) Li-Wei Feng et al. THIN SOLID FILMS
- Synthesis and properties of β-Ga2O3 nanostructures
- (2010) Jie Wang et al. VACUUM
- Recent Advances in Sensitized Mesoscopic Solar Cells
- (2009) Michael Grätzel ACCOUNTS OF CHEMICAL RESEARCH
- Oxidized noble metal Schottky contacts to n-type ZnO
- (2009) M. W. Allen et al. APPLIED PHYSICS LETTERS
- Why nitrogen cannot lead to p-type conductivity in ZnO
- (2009) J. L. Lyons et al. APPLIED PHYSICS LETTERS
- Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)
- (2009) T. C. Lovejoy et al. APPLIED PHYSICS LETTERS
- Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
- (2009) Rikiya Suzuki et al. APPLIED PHYSICS LETTERS
- Design and performance of a simple, room-temperature Ga2O3 nanowire gas sensor
- (2009) S. P. Arnold et al. APPLIED PHYSICS LETTERS
- Label free CMOS DNA image sensor based on the charge transfer technique
- (2009) Y. Maruyama et al. BIOSENSORS & BIOELECTRONICS
- Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2O3Nanomaterial by Thermal Evaporation
- (2009) Ma Hai-Lin et al. CHINESE PHYSICS LETTERS
- Growth of Sn-Doped β-Ga2O3Nanowires and Ga2O3−SnO2Heterostructures for Gas Sensing Applications
- (2009) Lena Mazeina et al. CRYSTAL GROWTH & DESIGN
- Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
- (2009) K.D. Chabak et al. IEEE ELECTRON DEVICE LETTERS
- Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation
- (2009) Kyu-Heon Cho et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Recent Advances in ZnO-Based Light-Emitting Diodes
- (2009) Yong-Seok Choi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- β-Al2xGa2-2xO3Thin Film Growth by Molecular Beam Epitaxy
- (2009) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Wet Etching of β-Ga2O3Substrates
- (2009) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Flame Detection by a β-Ga2O3-Based Sensor
- (2009) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- FPLAPW study of the structural, electronic, and optical properties of Ga2O3: Monoclinic and hexagonal phases
- (2009) F. Litimein et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Self-catalytic growth and field-emission properties of Ga2O3nanowires
- (2009) Godhuli Sinha et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Structural study of gallium oxynitrides prepared by ammonolysis of different oxide precursors
- (2009) Xavier Cailleaux et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Dendritic growth of amorphous gallium oxide in mixed GaOx/WOx thin films
- (2009) Simon Penner et al. MATERIALS CHEMISTRY AND PHYSICS
- Gallium-assisted growth of flute-like MgO nanotubes, Ga2O3-filled MgO nanotubes, and MgO/Ga2O3co-axial nanotubes
- (2009) Jiansheng Jie et al. NANOTECHNOLOGY
- Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices
- (2009) E Nogales et al. NANOTECHNOLOGY
- Ultrafast VLS growth of epitaxial β- Ga2O3nanowires
- (2009) E Auer et al. NANOTECHNOLOGY
- Growth of β-Ga2O3on Al2O3and GaAs using metal-organic vapor-phase epitaxy
- (2009) Volker Gottschalch et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- An in situ XAS investigation of the kinetics of the ammonolysis of Ga2O3 and the oxidation of GaN
- (2009) J. Brendt et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Shallow donor state of hydrogen inIn2O3andSnO2: Implications for conductivity in transparent conducting oxides
- (2009) P. D. C. King et al. PHYSICAL REVIEW B
- Microstructural and electrical properties of Ga2O3 nanowires grown at various temperatures by vapor–liquid–solid technique
- (2009) Nguyen Duy Cuong et al. SENSORS AND ACTUATORS B-CHEMICAL
- Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
- (2008) Takayoshi Oshima et al. Applied Physics Express
- Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer
- (2008) Hisashi Shima et al. APPLIED PHYSICS LETTERS
- Dielectric passivation effects on ZnO light emitting diodes
- (2008) Yu-Lin Wang et al. APPLIED PHYSICS LETTERS
- Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature
- (2008) Encarnación G. Víllora et al. APPLIED PHYSICS LETTERS
- Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
- (2008) Encarnación G. Víllora et al. APPLIED PHYSICS LETTERS
- Self-assembly of β-Ga2O3 nanobelts
- (2008) Ying Guo et al. APPLIED SURFACE SCIENCE
- Detection of DNA and proteins using amorphous silicon ion-sensitive thin-film field effect transistors
- (2008) D. Gonçalves et al. BIOSENSORS & BIOELECTRONICS
- High-Pressure and High-Temperature Behaviour of Gallium Oxide
- (2008) Ma Yan-Mei et al. CHINESE PHYSICS LETTERS
- Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3Nanowires
- (2008) Lena Mazeina et al. CRYSTAL GROWTH & DESIGN
- Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes
- (2008) Yu-Lin Wang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
- (2008) Hideo Aida et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
- (2008) Daisuke Shinohara et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- VESTA: a three-dimensional visualization system for electronic and structural analysis
- (2008) Koichi Momma et al. JOURNAL OF APPLIED CRYSTALLOGRAPHY
- Resistance switching characteristics in Li-doped NiO
- (2008) Kyooho Jung et al. JOURNAL OF APPLIED PHYSICS
- Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors
- (2008) B. S. Kang et al. JOURNAL OF APPLIED PHYSICS
- Hydrogen on polycrystalline β-Ga2O3: Surface chemisorption, defect formation, and reactivity
- (2008) W JOCHUM et al. JOURNAL OF CATALYSIS
- Growth of oxide compounds under dynamic atmosphere composition
- (2008) D. Klimm et al. JOURNAL OF CRYSTAL GROWTH
- The growth behavior of β-Ga2O3 nanowires on the basis of catalyst size
- (2008) Kyo Hong Choi et al. JOURNAL OF CRYSTAL GROWTH
- GaN nanowire and Ga2O3 nanowire and nanoribbon growth from ion implanted iron catalyst
- (2008) Jason L. Johnson et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Synthesis of gallium oxide nanowires and their electrical properties
- (2008) Zijiong Li et al. MICROELECTRONIC ENGINEERING
- Nanophotonic Switch: Gold-in-Ga2O3Peapod Nanowires
- (2008) Chin-Hua Hsieh et al. NANO LETTERS
- The growth of ultralong and highly blue luminescent gallium oxide nanowires and nanobelts, and direct horizontal nanowire growth on substrates
- (2008) Chi-Liang Kuo et al. NANOTECHNOLOGY
- A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide
- (2008) Lakshmi Nagarajan et al. NATURE MATERIALS
- Rh2O3(II)-type structures inGa2O3andIn2O3under high pressure: Experiment and theory
- (2008) Hitoshi Yusa et al. PHYSICAL REVIEW B
- wannier90: A tool for obtaining maximally-localised Wannier functions
- (2007) Arash A. Mostofi et al. COMPUTER PHYSICS COMMUNICATIONS
- Preparation, characterization and formation mechanism of gallium oxide nanowires
- (2007) K.F. Cai et al. CURRENT APPLIED PHYSICS
- O2 and CO sensing of Ga2O3 multiple nanowire gas sensors
- (2007) Zhifu Liu et al. SENSORS AND ACTUATORS B-CHEMICAL
- Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate
- (2007) Yi Zhou et al. SOLID-STATE ELECTRONICS
- Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy
- (2007) Takayoshi Oshima et al. THIN SOLID FILMS
- Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing
- (2007) Shigeo Ohira et al. THIN SOLID FILMS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started