High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

Published 2015 View Full Article

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Title
High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
Authors
Keywords
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Journal
Applied Physics Express
Volume 8, Issue 3, Pages 031101
Publisher
Japan Society of Applied Physics
Online
2015-02-12
DOI
10.7567/apex.8.031101

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