On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

(2015) Ye Jia et al.   APPLIED PHYSICS LETTERS

AlGaN composition dependence of the band offsets for epitaxial Gd2O3/AlxGa1−xN (0 ≤ x ≤ 0.67) heterostructures

(2014) Jon F. Ihlefeld et al.   APPLIED PHYSICS LETTERS

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

(2014) Takafumi Kamimura et al.   APPLIED PHYSICS LETTERS

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

(2014) Halit Altuntas et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Band offsets and electrical stability characterization of Zr-doped ZnO thin-film transistors with a Gd2O3 gate insulator

(2014) Hsien-Chin Chiu et al.   MICROELECTRONIC ENGINEERING

Oxidation of GaN(0001) by low-energy ion bombardment

(2013) M. Grodzicki et al.   APPLIED SURFACE SCIENCE

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

(2013) Daniel Splith et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

(2012) Wei Wei et al.   Nanoscale Research Letters

Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

(2011) Y. P. Chiu et al.   APPLIED PHYSICS LETTERS

Band alignment of Ga2O3/6H-SiC heterojunction

(2011) Shao-Hui Chang et al.   Chinese Physics B

Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study

(2011)   JOURNAL OF APPLIED PHYSICS

Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

(2011) Winfried Mönch   JOURNAL OF APPLIED PHYSICS

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Band lineup between silicon and transparent conducting oxides

(2010) B. Höffling et al.   APPLIED PHYSICS LETTERS

Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology

(2009) Wen Hsin Chang et al.   ADVANCED MATERIALS

Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations

(2009) A. Schleife et al.   APPLIED PHYSICS LETTERS

Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

(2009) L. K. Chu et al.   APPLIED PHYSICS LETTERS

Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing

(2009) Rikiya Suzuki et al.   APPLIED PHYSICS LETTERS

On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states

(2008) Winfried Mönch   APPLIED PHYSICS LETTERS

Effect of oxygen on the electronic configuration of Gd2O3∕Ge heterojunctions

(2008) M. Perego et al.   APPLIED PHYSICS LETTERS