Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation

Published 2009 View Full Article

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Title
Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 3, Pages 365-369
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-01-31
DOI
10.1109/ted.2008.2011931

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