Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

Title
Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 10, Pages 102107
Publisher
AIP Publishing
Online
2010-03-11
DOI
10.1063/1.3357431

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