Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
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Title
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 120, Issue 22, Pages 225308
Publisher
AIP Publishing
Online
2016-12-16
DOI
10.1063/1.4971957
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