Extraction of Migration Energies and Role of Implant Damage on Thermal Stability of Deuterium in Ga 2 O 3

Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

(2017) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Modelling plasma-induced hydrogen profiles in boron-doped and near-intrinsic silicon

(2017) Vladimir V. Voronkov et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain Current

(2017) S. Mukherjee et al.   ECS Journal of Solid State Science and Technology

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

(2017) Munho Kim et al.   Journal of Materials Chemistry C

Group-III Sesquioxides: Growth, Physical Properties and Devices

(2017) Holger von Wenckstern   Advanced Electronic Materials

Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3

(2016) Philip Weiser et al.   APPLIED PHYSICS LETTERS

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

(2016) Marko J. Tadjer et al.   JOURNAL OF ELECTRONIC MATERIALS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Thermal Stability of Implanted or Plasma Exposed Deuterium in Single Crystal Ga2O3

(2016) Shihyun Ahn et al.   ECS Journal of Solid State Science and Technology

Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

(2015) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Electrical compensation by Ga vacancies in Ga2O3 thin films

(2015) E. Korhonen et al.   APPLIED PHYSICS LETTERS

Hydrogen centers and the conductivity ofIn2O3single crystals

(2015) Weikai Yin et al.   PHYSICAL REVIEW B

Simulation of Radiation Effects in AlGaN/GaN HEMTs

(2015) E. E. Patrick et al.   ECS Journal of Solid State Science and Technology

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Contrasting the experimental properties of hydrogen in SnO2, In2O3, and TiO2

(2014) Michael Stavola et al.   JOURNAL OF APPLIED PHYSICS

Bond angles for O-H defects in SnO2from polarization properties of their vibrational modes

(2012) Figen Bekisli et al.   PHYSICAL REVIEW B

Hydrogenated cation vacancies in semiconducting oxides

(2011) J B Varley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Muonium dynamics in transparent conducting oxides

(2011) Y.G. Celebi et al.   PHYSICA B-CONDENSED MATTER

Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity

(2010) P. D. C. King et al.   APPLIED PHYSICS LETTERS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Hydrogen donors inSnO2studied by infrared spectroscopy and first-principles calculations

(2010) W. M. Hlaing Oo et al.   PHYSICAL REVIEW B