Epitaxial growth of α-Ga 2 O 3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe 2 O 3 buffer layers

Published 2017 View Full Article

Authors

Keywords

α-Ga, 2, O, 3, Epitaxial growth, Chemical vapor deposition, Corundum structure

Journal

MATERIALS LETTERS

Volume 205, Issue -, Pages 28-31

Publisher

Elsevier BV

Online

2017-06-03

DOI

10.1016/j.matlet.2017.06.003

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