Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
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Title
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 21, Pages 213501
Publisher
AIP Publishing
Online
2016-11-22
DOI
10.1063/1.4967931
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