Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

Title
Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric
Authors
Keywords
-
Journal
ECS Journal of Solid State Science and Technology
Volume 5, Issue 9, Pages P468-P470
Publisher
The Electrochemical Society
Online
2016-07-08
DOI
10.1149/2.0061609jss

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