Characterization of vertical Au/β-Ga2O3single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

Published 2016 View Full Article

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Title
Characterization of vertical Au/β-Ga2O3single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
Authors
Keywords
-
Journal
Chinese Physics B
Volume 25, Issue 1, Pages 017201
Publisher
IOP Publishing
Online
2016-01-21
DOI
10.1088/1674-1056/25/1/017201

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