Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy

Title
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
Authors
Keywords
Ga2O3, Free Carrier Concentration, Twin Lamella, Free Carrier Density, Dopant Incorporation
Journal
JOURNAL OF MATERIALS SCIENCE
Volume 51, Issue 7, Pages 3650-3656
Publisher
Springer Nature
Online
2015-12-29
DOI
10.1007/s10853-015-9693-6

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