Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge

Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells

(2014) Yun Seog Lee et al.   ADVANCED MATERIALS

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

(2014) T. G. Allen et al.   APPLIED PHYSICS LETTERS

Amorphous silicon passivated contacts for diffused junction silicon solar cells

(2014) J. Bullock et al.   JOURNAL OF APPLIED PHYSICS

On effective surface recombination parameters

(2014) Keith R. McIntosh et al.   JOURNAL OF APPLIED PHYSICS

Effect of postdeposition annealing on the electrical properties of β-Ga2O3thin films grown onp-Si by plasma-enhanced atomic layer deposition

(2014) Halit Altuntas et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Cu2O-based heterojunction solar cells with an Al-doped ZnO/oxide semiconductor/thermally oxidized Cu2O sheet structure

(2014) Tadatsugu Minami et al.   SOLAR ENERGY

Modeling Recombination at the Si–Al$_{2}$O $_{3}$ Interface

(2013) L. E. Black et al.   IEEE Journal of Photovoltaics

Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al$_{2}$O$_{3}$ Layers

(2013) Wensheng Liang et al.   IEEE Journal of Photovoltaics

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

(2012) G. Dingemans et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma

(2012) Inci Donmez et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

(2012) Aravind Kumar Chandiran et al.   NANO LETTERS

Improved quantitative description of Auger recombination in crystalline silicon

(2012) Armin Richter et al.   PHYSICAL REVIEW B

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS