Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

(2015) Patrick Vogt et al.   APPLIED PHYSICS LETTERS

Electrical compensation by Ga vacancies in Ga2O3 thin films

(2015) E. Korhonen et al.   APPLIED PHYSICS LETTERS

Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

(2015) Takayoshi Oshima et al.   JOURNAL OF CRYSTAL GROWTH

Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles

(2015) Sergio Fernández-Garrido et al.   NANO LETTERS

Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

(2015) Oliver Bierwagen   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

(2014) Hironori Okumura et al.   Applied Physics Express

Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

(2014) Kohei Sasaki et al.   JOURNAL OF CRYSTAL GROWTH

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

(2013) Daniel Splith et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth, characterization, and properties of bulk SnO2single crystals

(2013) Zbigniew Galazka et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

(2013) Guenter Wagner et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Experimental electronic structure of In2O3and Ga2O3

(2011) Christoph Janowitz et al.   NEW JOURNAL OF PHYSICS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Czochralski growth and characterization of β-Ga2O3 single crystals

(2010) Z. Galazka et al.   CRYSTAL RESEARCH AND TECHNOLOGY

β-Ga2O3 growth by plasma-assisted molecular beam epitaxy

(2010) Min-Ying Tsai et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant

(2009) Oliver Bierwagen et al.   APPLIED PHYSICS LETTERS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS