Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures

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(2015) Shizuo Fujita   JAPANESE JOURNAL OF APPLIED PHYSICS

High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer

(2013) Tadatsugu Minami et al.   Applied Physics Express

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

A Survey of Wide Bandgap Power Semiconductor Devices

(2013) Jose Millan et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

(2012) E. Bahat-Treidel et al.   IEEE ELECTRON DEVICE LETTERS

Mobility analysis of highly conducting thin films: Application to ZnO

(2010) D. C. Look et al.   APPLIED PHYSICS LETTERS