Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga 2 O 3 Layers Grown by MOVPE on (010)-Oriented Substrates

Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

(2016) Patrick Vogt et al.   APPLIED PHYSICS LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Anisotropic thermal conductivity in single crystal β-gallium oxide

(2015) Zhi Guo et al.   APPLIED PHYSICS LETTERS

Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

(2015) Xuejian Du et al.   JOURNAL OF MATERIALS SCIENCE

Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy

(2015) Michele Baldini et al.   JOURNAL OF MATERIALS SCIENCE

β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

(2015) Stephen W. Kaun et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

(2014) Zbigniew Galazka et al.   JOURNAL OF CRYSTAL GROWTH

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

(2013) Guenter Wagner et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Hydrogenated cation vacancies in semiconducting oxides

(2011) J B Varley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Transparent semiconducting oxides: materials and devices

(2010) Marius Grundmann et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS